Description

Propel 300mm Process Module Reactor cart assembly 300mm GaN 300mm stainless steel high efficiency water cooled growth chamber • Temperature controlled Uniform Flow Flange assembly with temperature and flow monitoring Integrated rotation mechanism, motor, and drive assembly Reactor temperature management system with temperature flow and water level alarms • Three zone resistive heater assembly with heat shields, electrical connectors and insulators Electronics Control Module 3 Zone DC power supplies for heater power * Digital devices on industry-standard DeviceNet digital network * Standardized cables and interconnects • Capable of facilities UPS * H2 Detector included * Options Included: Abatement interface kit Pump Exhaust Assembly - High capacity particle filter cart assembly with two exhaust isolation valves - DeviceNet throttle valve for chamber pressure control

Configuration

GaN MOCVD on Si wafers EFEM w/ Cassette to cassette automation 2x FOUP for carriers 2x FOUP for wafers

OEM Model Description

Veeco’s Propel™ MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2”, 3×4”, 1×6” and 1×8” on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on Veeco’s leading TurboDisc® design including the IsoFlange™ and SymmHeat™ technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco D180, K465i™ or MaxBright™ systems to the Propel GaN MOCVD platform.