The TurboDisc K465i GaN MOCVD System is a production-proven system that provides high productivity for HB LED high-volume production fabs around the globe. It is known for its highest productivity and best-in-class yields. The K465i achieves up to 90% yield (5nm bin) due to its superior uniformity and excellent run-to-run repeatability. It also offers high productivity due to its full automation and shortened recovery period after maintenance.

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Veeco’s Propel™ MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2”, 3×4”, 1×6” and 1×8” on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.The system deposits high-quality GaN films for multiple applications such as power, RF, & photonics. The R200 reactor is based on Veeco’s leading TurboDisc® design including the IsoFlange™ and SymmHeat™ technologies that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco D180, K465i™ or MaxBright™ systems to the Propel GaN MOCVD platform.

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