Description

Epitaxy

Configuration

No Configuration

OEM Model Description

AIX G5+ C Planetary Reactor for GaN on 150/200 mm Si GaN on Si HEMT thickness uniformity 0.44 % standard deviation without edge exclusion. Mean thickness 3.37 µm.

Documents

Aixtron.pdf

aixtron__.pdf

aixtron_.pdf

_aixtron__.pdf

AIXTRON

AIX G5+ C

Verified

MOCVD

Last Verified: 14 days ago

Key Item Details

Condition:

Used

Operational Status:

Unknown

Product ID:

142356

Wafer Sizes:

8"/200mm

Vintage:

Unknown

Logistics Support

Available

Transaction Insured by Moov

Available

Refurbishment Services

Available

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listing-photo-c349528afff245ccbf40e2981a3bd5a8-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/53362/c349528afff245ccbf40e2981a3bd5a8/3bd2812a37ad460cb24779bf9ee10533_image0015_mw.png

Key Item Details

Condition:

Used

Operational Status:

Unknown

Product ID:

142356

Wafer Sizes:

8"/200mm

Vintage:

Unknown

Logistics Support

Available

Transaction Insured by Moov

Available

Refurbishment Services

Available

Description

Epitaxy

Configuration

No Configuration

OEM Model Description

AIX G5+ C Planetary Reactor for GaN on 150/200 mm Si GaN on Si HEMT thickness uniformity 0.44 % standard deviation without edge exclusion. Mean thickness 3.37 µm.