Description

Epitaxy

Configuration

No Configuration

OEM Model Description

AIX G5+ C Planetary Reactor for GaN on 150/200 mm Si GaN on Si HEMT thickness uniformity 0.44 % standard deviation without edge exclusion. Mean thickness 3.37 µm.

Documents

_aixtron_.pdf

aixtron_.pdf

_aixtron.pdf

aixtron.pdf

AIXTRON

AIX G5+ C

Verified

MOCVD

Last Verified: Over 30 days ago

Key Item Details

Condition:

Used

Operational Status:

Unknown

Product ID:

142352

Wafer Sizes:

8"/200mm

Vintage:

Unknown

Logistics Support

Available

Transaction Insured by Moov

Available

Refurbishment Services

Available

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listing-photo-35601bb8ac9e42488f5b3bc09bf2993c-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/53362/35601bb8ac9e42488f5b3bc09bf2993c/2251c8818f0e49208e8ebfe36775d6fb_c862a9251fd34473bb7ed607b25b4eac1201a_mw.jpeg

Key Item Details

Condition:

Used

Operational Status:

Unknown

Product ID:

142352

Wafer Sizes:

8"/200mm

Vintage:

Unknown

Logistics Support

Available

Transaction Insured by Moov

Available

Refurbishment Services

Available

Description

Epitaxy

Configuration

No Configuration

OEM Model Description

AIX G5+ C Planetary Reactor for GaN on 150/200 mm Si GaN on Si HEMT thickness uniformity 0.44 % standard deviation without edge exclusion. Mean thickness 3.37 µm.