
Description
Critical Dimension (CD) Measurement (non SEM)Configuration
No ConfigurationOEM Model Description
The SpectraShape™ 11k dimensional metrology system is used to fully characterize and monitor the critical dimensions (CD) and three dimensional shapes of finFETs, vertically stacked NAND and DRAM structures, and other complex features on integrated circuits at leading-edge design nodes. Using significant advancements in optical technologies and patented algorithms, the SpectraShape 11k identifies subtle variations in critical device parameters (critical dimension, high k and metal gate recess, side wall angle, resist height, hardmask height, pitch walking) across a range of process layers. With an improved stage and new measurement modules that enable high throughput operation, the SpectraShape 11k provides fast identification of process issues inline, helping fabs accelerate yield ramps and achieve stable production.Documents
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Verified
CATEGORY
Metrology
Last Verified: Over 30 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
134925
Wafer Sizes:
12"/300mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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SpectraShape 11k
CATEGORY
Metrology
Last Verified: Over 30 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
134925
Wafer Sizes:
12"/300mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Critical Dimension (CD) Measurement (non SEM)Configuration
No ConfigurationOEM Model Description
The SpectraShape™ 11k dimensional metrology system is used to fully characterize and monitor the critical dimensions (CD) and three dimensional shapes of finFETs, vertically stacked NAND and DRAM structures, and other complex features on integrated circuits at leading-edge design nodes. Using significant advancements in optical technologies and patented algorithms, the SpectraShape 11k identifies subtle variations in critical device parameters (critical dimension, high k and metal gate recess, side wall angle, resist height, hardmask height, pitch walking) across a range of process layers. With an improved stage and new measurement modules that enable high throughput operation, the SpectraShape 11k provides fast identification of process issues inline, helping fabs accelerate yield ramps and achieve stable production.Documents
No documents