Description

No description

Configuration

Details Attached Maximum implant energy - 160 keV Beam current range - 0.5 - 8mA Wafer sizes - 3", 4", 5" 6" capable End station - Manual load Automatic wafer handling - No AT4 Source - Standard Gas box - 4 ELB strings Vacuum - Dry pump + diffusion pump Control system - Standard console Included Disks • 4” 2-pt clamp (2) • 6” Clampless (4) • 4” Clampless (2) • 6” Full Ring • 4” Full Ring 0 deg. •4” Full Ring (4) •3” 2-pt •3” Full Ring Spare Parts •Ion Source (2) •Manipulator (2) •Flag Faraday (2) •Source Bushing (2) •Source Cooling Flange (2) •Source Isolation Valve

OEM Model Description

The AXCELIS NV 10-160 is a high-energy ion implanter, specifically designed for implanting ions into bare silicon wafers. It operates at 60 keV energy, and its implantation process allows for precise dosing in the range of 1 to 5∙10^15 ions per square centimeter. After implantation, the wafers can be annealed at 600°C for 20 minutes to activate and optimize the implanted ions' performance. The AXCELIS NV 10-160 is a powerful tool used in semiconductor manufacturing for creating controlled doping profiles and modifying material properties in silicon wafers, essential for producing advanced semiconductor devices.