Description
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High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.Documents
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Verified
CATEGORY
Ion Implantation
Last Verified: Yesterday
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
158785
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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AXCELIS
NV GSD HE3
CATEGORY
Ion Implantation
Last Verified: Yesterday
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
158785
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
No ConfigurationOEM Model Description
High energy implanter. processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.Documents
No documents