iStar is a low energy, high current batch mode ion implanter suitable for ultra shallow junction (USJ) formation for advanced technology nodes. Its tall beam design is a breakthrough technology that achieves high beam current (2mA) at extremely low energy (100eV) without sacrificing throughput. The low energy beam current for iStar is about 2x to 4x higher than other high current implanters AIBT claimed.

Advanced Ion Beam Technology, Inc. talents and experts with unique experience in semiconductor process applications are dedicated to the development and manufacture of semiconductor core process equipment. ‍The ions implanted by the low-energy and high-current ion implanter developed and manufactured by Hanchen Technology in the past.

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