Description
High Energy ImplanterConfiguration
No ConfigurationOEM Model Description
The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity.Documents
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SEN CORPORATION / SUMITOMO
NV GSD HE3
Verified
CATEGORY
High Energy
Last Verified: 8 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
94625
Wafer Sizes:
12"/300mm
Vintage:
Unknown
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View AllSEN CORPORATION / SUMITOMO
NV GSD HE3
CATEGORY
High Energy
Last Verified: 8 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
94625
Wafer Sizes:
12"/300mm
Vintage:
Unknown
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
High Energy ImplanterConfiguration
No ConfigurationOEM Model Description
The SEN CORPORATION / SUMITOMO NV-GSD HE3 is an ion implanter that uses high-energy and was developed by SEN Corporation. It is an improved version of the NV-GSD-HE3, with the addition of six RF resonators to the beam line. The system is configured for 300mm wafers and can accelerate boron ions up to 2 MeV with a beam current of 0.75 mA, as well as phosphorus ions up to 4.4 MeV with a beam current of 0.35 mA. Its primary use is in the image sensor market, where it increases the depth of CCD photodiodes in the wafer surface, allowing for higher pixel density in image sensors. The system also features a state-of-the-art beam profile controller for optimizing implant damage and micro-uniformity.Documents
No documents