Description
No descriptionConfiguration
No ConfigurationOEM Model Description
The VIISion 200 is a high current ion implantation system that autotunes and implants high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems. The beam line design incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.Documents
No documents
CATEGORY
High Current
Last Verified: Over 30 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
136424
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
APPLIED MATERIALS (AMAT) / VARIAN
VIISion 200
CATEGORY
High Current
Last Verified: Over 30 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
136424
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
No ConfigurationOEM Model Description
The VIISion 200 is a high current ion implantation system that autotunes and implants high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems. The beam line design incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer.Documents
No documents