Description
BtahConfiguration
IBS_HiCurOEM Model Description
The SEN Corporation / Sumitomo NV-GSD-HC3 is a high current ion implantation system designed for the efficient and high-volume production of devices such as DRAMs using 300 mm wafers. This model excels in ultra-low energy applications, offering implantation energy as low as 0.2 keV up to 80 keV. It ensures high current with minimal energy contamination through a deceleration mechanism, making it suitable for delicate processes down to 0.2 keV. The system features a high-performance, long-life ion source (ELS) for consistent performance. It provides high accuracy of implantation with excellent beam quality, minimizing metal contamination and cross-contamination using advanced technologies like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). Additionally, a plasma shower system minimizes charge buildup, enhancing process stability.Documents
No documents
CATEGORY
High Current
Last Verified: 9 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
144876
Wafer Sizes:
12"/300mm
Vintage:
2002
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SEN CORPORATION / SUMITOMO
NV GSD HC3
CATEGORY
High Current
Last Verified: 9 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
144876
Wafer Sizes:
12"/300mm
Vintage:
2002
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
BtahConfiguration
IBS_HiCurOEM Model Description
The SEN Corporation / Sumitomo NV-GSD-HC3 is a high current ion implantation system designed for the efficient and high-volume production of devices such as DRAMs using 300 mm wafers. This model excels in ultra-low energy applications, offering implantation energy as low as 0.2 keV up to 80 keV. It ensures high current with minimal energy contamination through a deceleration mechanism, making it suitable for delicate processes down to 0.2 keV. The system features a high-performance, long-life ion source (ELS) for consistent performance. It provides high accuracy of implantation with excellent beam quality, minimizing metal contamination and cross-contamination using advanced technologies like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). Additionally, a plasma shower system minimizes charge buildup, enhancing process stability.Documents
No documents