Description
Etch shallow and deep SiC materials from small pieces up to 4in wafer sizeConfiguration
Etched: SiO2, quartz, Pyrex, fused silica, Si3N4, bulk silicon Masks: Si, PR & Metals (Cr, Ti, Ni) 3000W 13.56MHz AE – Coil 1000W 13.56MHz ENI – Platen Backside Helium Cooling with Standard 8-pin clamp & lip seal C4F8, SF6, O2, H2, CF4, two open gas slots 2-80mT Process Pressure Platen -20°C to 120°C, Walls 100°C, Lid 120°C 2.5µm isolated trenches on 8-10µm TEOS Etch rate greater than 2000Å/min SiO2, greater than 4:1 selectivity SiO2: PR, etch rate variability intra- and inter-wafer ±3%, sidewalls 85-90° 5µm features on 3-10µm SiO2 Etch rate greater than 3000Å/min SiO2, greater than 7.5:1 selectivity SiO2:PR, etch rate variability intra- and inter-wafer ±2%, sidewalls 89-90° Converted to 100mm w/ ceramic parts (from quartz)OEM Model Description
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STS
MESC MULTIPLEX AOE
Verified
CATEGORY
Etch/Asher
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
73234
Wafer Sizes:
2"/50mm, 4"/100mm, 6"/150mm
Vintage:
Unknown
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Transaction Insured by Moov
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Refurbishment Services
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STS
MESC MULTIPLEX AOE
CATEGORY
Etch/Asher
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
73234
Wafer Sizes:
2"/50mm, 4"/100mm, 6"/150mm
Vintage:
Unknown
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Etch shallow and deep SiC materials from small pieces up to 4in wafer sizeConfiguration
Etched: SiO2, quartz, Pyrex, fused silica, Si3N4, bulk silicon Masks: Si, PR & Metals (Cr, Ti, Ni) 3000W 13.56MHz AE – Coil 1000W 13.56MHz ENI – Platen Backside Helium Cooling with Standard 8-pin clamp & lip seal C4F8, SF6, O2, H2, CF4, two open gas slots 2-80mT Process Pressure Platen -20°C to 120°C, Walls 100°C, Lid 120°C 2.5µm isolated trenches on 8-10µm TEOS Etch rate greater than 2000Å/min SiO2, greater than 4:1 selectivity SiO2: PR, etch rate variability intra- and inter-wafer ±3%, sidewalls 85-90° 5µm features on 3-10µm SiO2 Etch rate greater than 3000Å/min SiO2, greater than 7.5:1 selectivity SiO2:PR, etch rate variability intra- and inter-wafer ±2%, sidewalls 89-90° Converted to 100mm w/ ceramic parts (from quartz)OEM Model Description
None ProvidedDocuments
No documents