Description
high density, high anisotropy, ICP batch etch for GaN; could be used forSiC or metal etch; could also add a PECVD or ICP chamber to avoid cross contaminationchamber as well; fully automated. Wafers are automatically transfered to a wafer carrier which is mechanically clamped to the capacitively coupled cathode which provides biasing for good anisotropy and backside He cooling. Magnets are used to help focus the plasma for uniformityConfiguration
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ULVAC
NE-950EX
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
128838
Wafer Sizes:
6"/150mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
high density, high anisotropy, ICP batch etch for GaN; could be used forSiC or metal etch; could also add a PECVD or ICP chamber to avoid cross contaminationchamber as well; fully automated. Wafers are automatically transfered to a wafer carrier which is mechanically clamped to the capacitively coupled cathode which provides biasing for good anisotropy and backside He cooling. Magnets are used to help focus the plasma for uniformityConfiguration
No ConfigurationOEM Model Description
None ProvidedDocuments
No documents