ULVAC

NE-950EX

This is a ULVAC NE950 (APIOS NE-950EX) inductively coupled plasma dry etching machine, a high-performance semiconductor process equipment specially designed for LED mass production and compound semiconductor processing. The equipment is equipped with ULVAC CTS-1500 chiller and CRYO-U20 Cryopump vacuum system, which ensures stable operation of the equipment and meets high-precision process requirements. It supports 2-12 inch wafer etching, with batch processing capacity, which can greatly improve production efficiency. 
The equipment adopts ICP-RIE dry etching process, which can realize high-precision material removal through the combination of physical sputtering and chemical reaction, and supports Bosch process, low-temperature etching and other process modes. It is compatible with a variety of etchable materials, including Metal, GaN, InP, SiO₂, Si, Polyimide, Sapphire, ITO, SiC, AlN, ZnO and quaternary compound semiconductors, and is widely used in LED device manufacturing, MEMS fabrication, optoelectronic component processing and other fields. 

The specialty gas lines of the equipment are made of 316L BA/EP stainless steel with VCR face seal joints, which have high cleanliness and zero leakage performance, and are equipped with precision pressure regulating valves, MFC and leak detection devices to ensure safe and stable gas supply. The equipment is also equipped with HDD and original ULVAC operating software, supporting process recipe editing, real-time parameter monitoring and data recording, which is easy to operate. 

The equipment has been fully refurbished and tested, with complete maintenance records and all functions in normal operation. We provide on-site inspection and functional testing services for buyers, and can provide paid on-site installation, commissioning and process training services according to needs. The price is negotiable, and welcome interested buyers to contact us through Moov internal messages for more details such as equipment test videos and maintenance records. 

爱发科 NE950EX 核心参数与选型要点清单.docx

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Host console-  125*300*210 cm/1500
Nameplate-  NE-950EXt	 
Auxiliary machine- 	 chiller(40*100*100 cm/100kg )
                                 pump(38*100*55 cm/100kg )
                                  pump(38*100*55 cm/100kg )			 

Machine condition-   Normal, no missing parts
Damage description- None
Whether there are high and low frequencies-  YES Upper electrode: 13.56MHz Lower electrode: 12.5MHz
Gas type-  Ar, O2, N2, CF4, Cl2
Current-  Three-phase five-wire 208V/120A



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NO3

Host console-  100*325*210 cm/1500 
Nameplate-  NE-950EXt	 
Auxiliary machine-  chiller(40*100*100 cm/100kg )
                                pump(38*100*55 cm/100kg )
                                pump(38*100*55 cm/100kg )			 

Machine condition	- Normal, no missing parts
Damage description-  None 
Whether there are high and low frequencies-  YES Upper electrode: 13.56MHz Lower electrode: 12.5MHz 
Gas type-  Ar, O2, N2, CF4, Cl2	 
Current-  Three-phase five-wire 208V/120A


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high density, high anisotropy, ICP batch etch for GaN; could be used forSiC or metal etch; could also add a PECVD or ICP chamber to avoid cross contaminationchamber as well; fully automated.  Wafers are automatically  transfered to a  wafer carrier which is mechanically clamped to the capacitively coupled cathode which provides biasing for good anisotropy and backside He cooling.  Magnets are used to help focus the plasma for uniformity

NE-950EX

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