Description
Physical Specifications Main Unit: 44"W x 42"D x 26"H (112cm x 107cm x 66cm) Weight: 500lb (227kg) NOT INCLUDE VACUUM PUMP AND CHILLERS.Configuration
Wafer Sizes (Customized) Handles 3”(75mm), 4”(100mm), 5”(125mm), 6”(150mm) Silicon. Proven reactor chamber assembly with upper and lower electrode. Original belt system for Super Spatulas and Shuttle wafer transfer Substrate Positioning Processing directly on cooled wafer chuck. RF Matching Network 13.56 MHz fully automated. Solid State RF Generator ENI ACG-10B 13.56MHz. RF power: 50 to 1000 watts Typical Temperature controller with Julabo chiller 0-80°C. Original AC/DC power supply Tegal box. Gas Control, 4 independent gas line with 4 MFCs (Customized). Pressure Pressure Control Accurate, closed-loop pressure control with UPC and MKS Baratron capacitance pressure manometer. Process pressure 0 - 5000 mTorr. Front and rears touch screen monitor Tegal 90X Integrated Flat Panel Display • On-Screen 9XX System Schematics • Repair & Maintenance Data Files Included. Real-Time graphics Endpoint display. System functions Real-Time process data acquisition on display. Optical Endpoint Parameters. Absolute endpoint time system. Timed cycles up to 4 hour each Wafer quartz pins up/down Calibration and Built-in diagnostic functions. Recipe creation for fully automatic wafer processing. SEC/GEM communication function Rev. II Multi level password protections. Storage of 20 recipes Configuration system, Process Data and Recipe storage on a EEprom. Physical Specifications Main Unit: 44"W x 42"D x 26"H (112cm x 107cm x 66cm) Weight: 500lb (227kg) NOT INCLUDE VACUUM PUMP AND CHILLERS. Facility RequirementsOEM Model Description
The Tegal 903e is an inline RIE/plasma production etcher configured for six-inch wafers. It is a single-wafer, cassette-to-cassette driven tool with easy-to-use menu control and a 13.56 MHz RF Generator. The input gases are controlled by MFC, with up to 4 MFCs in the system. This tool implements multi-step etch recipes using multiple process gases and has been optimized for specific etches of specific films. Gases available in this configuration are N2, O2, SF6, CHF3, and He. The Tegal 903e plasma dry etch equipment is used by the semiconductor industry for integrated circuit fabrication. It is an industry standard in single-wafer dry etch of silicon nitride, polysilicon, amorphous silicon, and silicon oxide. Wafers are transported to a reaction chamber utilizing a non-friction spatula wafer transport mechanism. A gas mixture is introduced into the Reaction Chamber and becomes reactive by the application of radio frequency (RF) electromagnetic radiation. The reactive mixture, or plasma, etches away material that is not covered by the masking photoresist. The etch process is terminated by time (a parameter specified in the recipe), the wafer is unloaded from the reaction chamber, and a new wafer is introduced repeating the cycle until all wafers have been processed.Documents
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TEGAL
903E
CATEGORY
Dry / Plasma Etch
Last Verified: 6 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
141709
Wafer Sizes:
3"/75mm, 4"/100mm, 5"/125mm, 6"/150mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Physical Specifications Main Unit: 44"W x 42"D x 26"H (112cm x 107cm x 66cm) Weight: 500lb (227kg) NOT INCLUDE VACUUM PUMP AND CHILLERS.Configuration
Wafer Sizes (Customized) Handles 3”(75mm), 4”(100mm), 5”(125mm), 6”(150mm) Silicon. Proven reactor chamber assembly with upper and lower electrode. Original belt system for Super Spatulas and Shuttle wafer transfer Substrate Positioning Processing directly on cooled wafer chuck. RF Matching Network 13.56 MHz fully automated. Solid State RF Generator ENI ACG-10B 13.56MHz. RF power: 50 to 1000 watts Typical Temperature controller with Julabo chiller 0-80°C. Original AC/DC power supply Tegal box. Gas Control, 4 independent gas line with 4 MFCs (Customized). Pressure Pressure Control Accurate, closed-loop pressure control with UPC and MKS Baratron capacitance pressure manometer. Process pressure 0 - 5000 mTorr. Front and rears touch screen monitor Tegal 90X Integrated Flat Panel Display • On-Screen 9XX System Schematics • Repair & Maintenance Data Files Included. Real-Time graphics Endpoint display. System functions Real-Time process data acquisition on display. Optical Endpoint Parameters. Absolute endpoint time system. Timed cycles up to 4 hour each Wafer quartz pins up/down Calibration and Built-in diagnostic functions. Recipe creation for fully automatic wafer processing. SEC/GEM communication function Rev. II Multi level password protections. Storage of 20 recipes Configuration system, Process Data and Recipe storage on a EEprom. Physical Specifications Main Unit: 44"W x 42"D x 26"H (112cm x 107cm x 66cm) Weight: 500lb (227kg) NOT INCLUDE VACUUM PUMP AND CHILLERS. Facility RequirementsOEM Model Description
The Tegal 903e is an inline RIE/plasma production etcher configured for six-inch wafers. It is a single-wafer, cassette-to-cassette driven tool with easy-to-use menu control and a 13.56 MHz RF Generator. The input gases are controlled by MFC, with up to 4 MFCs in the system. This tool implements multi-step etch recipes using multiple process gases and has been optimized for specific etches of specific films. Gases available in this configuration are N2, O2, SF6, CHF3, and He. The Tegal 903e plasma dry etch equipment is used by the semiconductor industry for integrated circuit fabrication. It is an industry standard in single-wafer dry etch of silicon nitride, polysilicon, amorphous silicon, and silicon oxide. Wafers are transported to a reaction chamber utilizing a non-friction spatula wafer transport mechanism. A gas mixture is introduced into the Reaction Chamber and becomes reactive by the application of radio frequency (RF) electromagnetic radiation. The reactive mixture, or plasma, etches away material that is not covered by the masking photoresist. The etch process is terminated by time (a parameter specified in the recipe), the wafer is unloaded from the reaction chamber, and a new wafer is introduced repeating the cycle until all wafers have been processed.Documents
No documents