Description
De-installed STS Multiplex ICP AOE Pro. The system was in normal operation in an R&D capacity for shallow and deep etching. The tool had no known issues when taken out of service a couple months ago when their new tool arrived. STS Multiplex ICP AOE Pro Advanced Oxide Etcher (AOE) Configured: 100mm, 150mm Etched: SiO2, quartz, Pyrex, fused silica, Si3N4, bulk silicon Masks: Si, PR & Metals (Cr, Ti, Ni) 3000W 13.56MHz AE – Coil 1000W 13.56MHz ENI Platen Backside Helium Cooling with Standard 8-pin clamp & lip seal C4F8, SF6, O2, H2, CF4, two open gas slots 2-80mT Process Pressure Platen -20°C to 120°C, Walls 100°C, Lid 120°C 2.5µm isolated trenches on 8-10µm TEOS Etch rate greater than 2000Å/min SiO2, greater than 4:1 selectivity SiO2: PR, etch rate variability intra- and inter-wafer ±3%, sidewalls 85-90° 5µm features on 3-10µm SiO2 Etch rate greater than 3000Å/min SiO2, greater than 7.5:1 selectivity SiO2:PR, etch rate variability intra- and inter-wafer ±2%, sidewalls 89-90° Converted to 100mm w/ ceramic parts (from quartz)Configuration
No ConfigurationOEM Model Description
None ProvidedDocuments
No documents
STS
PRO ICP
CATEGORY
Dry / Plasma Etch
Last Verified: 7 days ago
Key Item Details
Condition:
Refurbished
Operational Status:
Deinstalled
Product ID:
138667
Wafer Sizes:
4"/100mm, 6"/150mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
De-installed STS Multiplex ICP AOE Pro. The system was in normal operation in an R&D capacity for shallow and deep etching. The tool had no known issues when taken out of service a couple months ago when their new tool arrived. STS Multiplex ICP AOE Pro Advanced Oxide Etcher (AOE) Configured: 100mm, 150mm Etched: SiO2, quartz, Pyrex, fused silica, Si3N4, bulk silicon Masks: Si, PR & Metals (Cr, Ti, Ni) 3000W 13.56MHz AE – Coil 1000W 13.56MHz ENI Platen Backside Helium Cooling with Standard 8-pin clamp & lip seal C4F8, SF6, O2, H2, CF4, two open gas slots 2-80mT Process Pressure Platen -20°C to 120°C, Walls 100°C, Lid 120°C 2.5µm isolated trenches on 8-10µm TEOS Etch rate greater than 2000Å/min SiO2, greater than 4:1 selectivity SiO2: PR, etch rate variability intra- and inter-wafer ±3%, sidewalls 85-90° 5µm features on 3-10µm SiO2 Etch rate greater than 3000Å/min SiO2, greater than 7.5:1 selectivity SiO2:PR, etch rate variability intra- and inter-wafer ±2%, sidewalls 89-90° Converted to 100mm w/ ceramic parts (from quartz)Configuration
No ConfigurationOEM Model Description
None ProvidedDocuments
No documents