Description
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This highly capable semiconductor etch tool was sparingly used (only a few hours per week) and meticulously maintained under service agreements throughout its operational life. Before decommissioning, it was in excellent working condition and has since been stored carefully. Key Features: Cassette to Cassette Handling Designed for silicon etching with gases plumbed for SF6, C4F8, N2, O2, and Ar Includes an add-on module for XeF2 isotropic silicon etching Tooling compatible with both 100 mm and 150 mm wafers Unique cyclical etching capability: alternating phases of etch and passivation enable deep, highly anisotropic etching results Capable of etching depths exceeding 500 microns and aspect ratios up to 20:1 with exceptional precision This STS ASE system remains a top choice for deep reactive-ion etching applications requiring fine control and high aspect ratio trenches, widely used in MEMS and microfabrication research. Contact for further details and pricing.OEM Model Description
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Verified
CATEGORY
Dry / Plasma Etch
Last Verified: 28 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
136806
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
STS
ASE ICP DRIE
CATEGORY
Dry / Plasma Etch
Last Verified: 28 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
136806
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
This highly capable semiconductor etch tool was sparingly used (only a few hours per week) and meticulously maintained under service agreements throughout its operational life. Before decommissioning, it was in excellent working condition and has since been stored carefully. Key Features: Cassette to Cassette Handling Designed for silicon etching with gases plumbed for SF6, C4F8, N2, O2, and Ar Includes an add-on module for XeF2 isotropic silicon etching Tooling compatible with both 100 mm and 150 mm wafers Unique cyclical etching capability: alternating phases of etch and passivation enable deep, highly anisotropic etching results Capable of etching depths exceeding 500 microns and aspect ratios up to 20:1 with exceptional precision This STS ASE system remains a top choice for deep reactive-ion etching applications requiring fine control and high aspect ratio trenches, widely used in MEMS and microfabrication research. Contact for further details and pricing.OEM Model Description
None ProvidedDocuments
No documents