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STS MULTIPLEX ICP
    Description
    No description
    Configuration
    STS Multiplex ICP Deep Reactive Ion Etcher (DRIE), 6"-8" Semi auto mode Frequency: 600 Hz Mode: Bosch Generator rack Chiller Pump Chamber: Deep silicon etch process SOI Trench etch Gas line: (4) Valves - MFC Filters (VCR) ICP 240BF Source (ASE-exc PSU / Matching unit) Temperature: 5°C - 40°C ICP SC160M Process chamber (MESC) RF Supply / Matching unit: 300/30 W (13.56 MHz) RF Supply / Matching unit: 1 kW (13.56 MHz) Chamber parts: Substrate, 6" (Mechanical clamping) Chamber externals: ICP V2 Mechanical wafer clamp electrode (Tripod) With he backside cooling Process chamber: ICP V2 Unified ISO250 (Inc insulation spacers) SR With 160 adapter LEYBOLD MAG900CT Turbo pump EDWARDS iQDP80 (M) Dry pump Includes: EDWARDS D146 Penning gauge MKS 51A and SMC ZSE6B Pressure switches EDWARDS 655 100 mT Cap man gauge EDWARDS E2M40 PFPE vacuum pump NW16 Bypass pump line Gas box Affinity chiller Electric cluster cabinet Lower electrode: ICP WTC Tripod lift Substrate clamping / Platen: ICP WTC Tripod 150 mm Lower RF enclosure / MU: ICP V2 WTC H/F, L/F (SOI) Electrode lift stops: 96 mm Electrode spacing: 136 mm HBC Assembly: ICP V2 TYLAN CDLD 10T Cap man gauge TYLAN FC2901 50 sccm He Cal MFC Upper electrode with aperture mounting Upper electrode source: ICP Balun Upper RF enclosure / MU: Balun 1kW (High cool) Chamber lid: ICP Heated RF Generators: Upper: ENI ACG10B 1 kW (13.56 MHz) Lower: ENI ACG3B 300 - 30 W (13.56 MHz) LF5 Pulse gen switch unit Bypass pumping: Automatic NW16 Heated foreline: ICP NW40 (1m) Pumping line EDWARDS iQDP80 (M) Backing pump Chamber heating: (4) WATLOW 700 W Cartridge heaters Gasbox: (4) lines (Includes PFC1 module) Chamber cover panels: ICP V2 Gases / MFC Size (sccm) / Seal type / Line type / Gas type C4F8(S) / 200 / VITON / G12 / Clean SF6(S) / 300 / VITON / G12 / Clean O2(S) / 100 / VITON / G12 / Clean Ar / 100 / VITON / G12 / Clean / Process Loadlock: Carousel vacuum loadlock Carousel loadlock parts: (2) Substrates, 6" EDWARDS RF Rack mount Cabinet F (Fomblin) Rotary pump Power supply: 208 V, 3 Phase, 60 Hz
    OEM Model Description
    The STS MULTIPLEX ICP is an etch system. The STS MULTIPLEX ICP can be used with 2” wafer sizes. It has a silicon material plate and ASE polymer system processer.
    Documents
    verified-listing-icon

    Verified

    CATEGORY
    Dry / Plasma Etch

    Last Verified: Over 60 days ago

    Key Item Details

    Condition:

    Used


    Operational Status:

    Unknown


    Product ID:

    134387


    Wafer Sizes:

    6"/150mm, 8"/200mm


    Vintage:

    2000


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    Similar Listings
    View All
    STS MULTIPLEX ICP

    STS

    MULTIPLEX ICP

    Dry / Plasma Etch
    Vintage: 2000Condition: Used
    Last VerifiedOver 60 days ago

    STS

    MULTIPLEX ICP

    verified-listing-icon
    Verified
    CATEGORY
    Dry / Plasma Etch
    Last Verified: Over 60 days ago
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    Key Item Details

    Condition:

    Used


    Operational Status:

    Unknown


    Product ID:

    134387


    Wafer Sizes:

    6"/150mm, 8"/200mm


    Vintage:

    2000


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    Description
    No description
    Configuration
    STS Multiplex ICP Deep Reactive Ion Etcher (DRIE), 6"-8" Semi auto mode Frequency: 600 Hz Mode: Bosch Generator rack Chiller Pump Chamber: Deep silicon etch process SOI Trench etch Gas line: (4) Valves - MFC Filters (VCR) ICP 240BF Source (ASE-exc PSU / Matching unit) Temperature: 5°C - 40°C ICP SC160M Process chamber (MESC) RF Supply / Matching unit: 300/30 W (13.56 MHz) RF Supply / Matching unit: 1 kW (13.56 MHz) Chamber parts: Substrate, 6" (Mechanical clamping) Chamber externals: ICP V2 Mechanical wafer clamp electrode (Tripod) With he backside cooling Process chamber: ICP V2 Unified ISO250 (Inc insulation spacers) SR With 160 adapter LEYBOLD MAG900CT Turbo pump EDWARDS iQDP80 (M) Dry pump Includes: EDWARDS D146 Penning gauge MKS 51A and SMC ZSE6B Pressure switches EDWARDS 655 100 mT Cap man gauge EDWARDS E2M40 PFPE vacuum pump NW16 Bypass pump line Gas box Affinity chiller Electric cluster cabinet Lower electrode: ICP WTC Tripod lift Substrate clamping / Platen: ICP WTC Tripod 150 mm Lower RF enclosure / MU: ICP V2 WTC H/F, L/F (SOI) Electrode lift stops: 96 mm Electrode spacing: 136 mm HBC Assembly: ICP V2 TYLAN CDLD 10T Cap man gauge TYLAN FC2901 50 sccm He Cal MFC Upper electrode with aperture mounting Upper electrode source: ICP Balun Upper RF enclosure / MU: Balun 1kW (High cool) Chamber lid: ICP Heated RF Generators: Upper: ENI ACG10B 1 kW (13.56 MHz) Lower: ENI ACG3B 300 - 30 W (13.56 MHz) LF5 Pulse gen switch unit Bypass pumping: Automatic NW16 Heated foreline: ICP NW40 (1m) Pumping line EDWARDS iQDP80 (M) Backing pump Chamber heating: (4) WATLOW 700 W Cartridge heaters Gasbox: (4) lines (Includes PFC1 module) Chamber cover panels: ICP V2 Gases / MFC Size (sccm) / Seal type / Line type / Gas type C4F8(S) / 200 / VITON / G12 / Clean SF6(S) / 300 / VITON / G12 / Clean O2(S) / 100 / VITON / G12 / Clean Ar / 100 / VITON / G12 / Clean / Process Loadlock: Carousel vacuum loadlock Carousel loadlock parts: (2) Substrates, 6" EDWARDS RF Rack mount Cabinet F (Fomblin) Rotary pump Power supply: 208 V, 3 Phase, 60 Hz
    OEM Model Description
    The STS MULTIPLEX ICP is an etch system. The STS MULTIPLEX ICP can be used with 2” wafer sizes. It has a silicon material plate and ASE polymer system processer.
    Documents
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    View All
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