Description
Metal layer dry etching machineConfiguration
No ConfigurationOEM Model Description
TCP 9600 is a high-density, low-pressure system from Lam’s TCP product line. It was introduced in late 1992 and incorporates the Company’s patented Transformer Coupled Plasma-TM- source technology for etching 0.35 micron and smaller geometries. The TCP 9600 series is designed for metal etch applications and is used to produce a broad range of advanced logic and memory devices. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates, with independent power control to the lower electrode. This improves etch results across a wider process window and offers customers a reliable, lower cost of ownership solution to their advanced needs.Documents
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LAM RESEARCH CORPORATION
TCP 9600
Verified
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
112610
Wafer Sizes:
6"/150mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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LAM RESEARCH CORPORATION
TCP 9600
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
112610
Wafer Sizes:
6"/150mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Metal layer dry etching machineConfiguration
No ConfigurationOEM Model Description
TCP 9600 is a high-density, low-pressure system from Lam’s TCP product line. It was introduced in late 1992 and incorporates the Company’s patented Transformer Coupled Plasma-TM- source technology for etching 0.35 micron and smaller geometries. The TCP 9600 series is designed for metal etch applications and is used to produce a broad range of advanced logic and memory devices. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates, with independent power control to the lower electrode. This improves etch results across a wider process window and offers customers a reliable, lower cost of ownership solution to their advanced needs.Documents
No documents