Hitachi High-Tech offers a range of advanced industrial equipment solutions for assembly and processing machines used in the production of lithium batteries, auto parts and advanced film. Also offered R&D equipment necessary for the development of FC, organic materials, and catalyst materials.

HITACHI

M-8190XT

U-511A

U 7050A

M 612A

M-600

M-216NX

M 612

M-712A

M-3Z8EX

M 531A

M-6000

M-308FXW

M-8000 Series is utilized for hard mask and silicon etching for 32nm and beyond.

 M-8000

M 501

Its integrated metal etch/photoresist strip/wet clean capability is highly effective in preventing corrosion, a serious problem in advanced metallization systems.

M-308ATWE

M-328FX

E-642A

U-8250

M-9000

U-722

M-4510XT

The U-8150 performs fine and accurate silicon etching on 300 mm wafers and is especially useful for gate etching after the 65 node. The U8150 has ultra high frequency electron cyclotron resonance plasma etching technology adapted for accurate etching, which has already achieved good results, and has a new mainframe that can have four etching reactors installed. New functions have been added to the etching reactor as follows. For fine and high-accuracy processes: (1) Symmetrical and high-speed exhaust system. (2) Multiwave endpoint detector. For improved yield: (1) New materials for low-particle and low heavy metal contamination etching reactor. For improved productivity: (1) Replaceable parts in etching reactor. (2) Reduced inner cleaning area of etching reactor. (3) High-speed transfer system using double-armed robot. An advanced process control system will be optional in the U-8150.

U-8150

U-712AE

M-8170XT Sebit is the upgraded version of the M-8170 that was launched in 2007. In addition to the microwave ECR approach, the new model introduces high-speed wafer temperature control, high vacuum exhaust control technology, and a symmetrical chamber structure. The new system achieves superior profile controllability, CD uniformity, and edge exclusion performance for hard mask etching and double patterning-compatible mask etching. The system also handles high-k dielectric gate insulation film, metal gates and a variety of other new materials. Major semiconductor memory manufacturers have already completed their evaluation for the 20nm generation of the system, and are looking to incorporate it into their mass production lines going forward.

M-8170XT

HS-9050 is equipped with a gas system compatible with both organic and inorganic films. Processing can be flexibly set based on the structure of the film layers, enabling the entire removal process of multilayer resists in next-generation devices to be performed within the same chamber. Meanwhile, helical downflow plasma has been newly adopted as the plasma source, resulting in a highly efficient, less damaging process.



HS-9050

M511

E-541AW

U-712A

Hitachi: M-308AT/ATW ECR metal etch, clustered etch, stirip, wet rinse stations.

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

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Top HITACHI Dry / Plasma Etch

M-4510XT

U-722

M-9000

U-8150

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