Overview

The U-8150 performs fine and accurate silicon etching on 300 mm wafers and is especially useful for gate etching after the 65 node. The U8150 has ultra high frequency electron cyclotron resonance plasma etching technology adapted for accurate etching, which has already achieved good results, and has a new mainframe that can have four etching reactors installed. New functions have been added to the etching reactor as follows. For fine and high-accuracy processes: (1) Symmetrical and high-speed exhaust system. (2) Multiwave endpoint detector. For improved yield: (1) New materials for low-particle and low heavy metal contamination etching reactor. For improved productivity: (1) Replaceable parts in etching reactor. (2) Reduced inner cleaning area of etching reactor. (3) High-speed transfer system using double-armed robot. An advanced process control system will be optional in the U-8150.