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Description
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The Centura TxZ is a chemical vapor deposition (CVD) system that is used for depositing thin films of various materials on semiconductor wafers. It can be used with 8” wafer size and CVD system size is also 8”. In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum. In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum.Documents
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APPLIED MATERIALS (AMAT)
CENTURA TxZ
Verified
CATEGORY
Deposition
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
106360
Wafer Sizes:
Unknown
Vintage:
Unknown
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View AllAPPLIED MATERIALS (AMAT)
CENTURA TxZ
CATEGORY
Deposition
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
106360
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
HEATERConfiguration
No ConfigurationOEM Model Description
The Centura TxZ is a chemical vapor deposition (CVD) system that is used for depositing thin films of various materials on semiconductor wafers. It can be used with 8” wafer size and CVD system size is also 8”. In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum. In September 1996, the Liner TxZ Centura system was launched. This system combines a new CVD TiN chamber with a Coherent PVD Ti chamber, and allows for deposition of sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum.Documents
No documents