Description
No descriptionConfiguration
Single Process Change -ICP source 2 MHz up to 2000 W with temperature control -Substrate temperature control via bipolar Johnsen-Rahbek electrostatic chuck with backside Helium cooling -CCP source 13.56 MHz up to 600 W -Thermally managed chamber liner and pump train -Optical emission spectroscopy Gases and maximum flows in positions 1 to 8 are CF4 (84 sccm), O2 (1000 sccm), He (50sccm), Ar (50 sccm), O2 (50 sccm), CHF3 (100 sccm), N2 (200 sccm) and H2 (100 sccm) respectively. The operating system is Windows 7 Professional, tool software is Plasma-Therm Cortex and the OES software is Plasma-Therm EndpointWorks Wafer size configuration is 6’’ JEIDA flatOEM Model Description
VERSALINE system models are configured to perform an array of etch and deposition processes. Ion beam technology suits a range of applications, from low, controllable damage etching to high-rate, high-aspect-ratio, deep silicon etching to difficult materials. The systems support process control through EndpointWorks®. Enhancements include data logging, automated maintenance scheduler (AMS), and SECS/GEM. Our Cortex® control system provides a stable, user-friendly control interface designed for efficiency and productivity. The VERSALINE platform’s modular design allows for flexible configuration of substrate handling for a variety of handling options, from R&D single wafer or carrier loading with a loadlock to high-volume, multi-chamber production clusters. Clear upgrade paths that leverage costs and process development make future planning easy.Documents
No documents
PLASMATHERM
VERSALINE CVD
Verified
CATEGORY
CVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
66906
Wafer Sizes:
6"/150mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Similar Listings
View All
PLASMATHERM
VERSALINE CVD
CATEGORY
CVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
66906
Wafer Sizes:
6"/150mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
Single Process Change -ICP source 2 MHz up to 2000 W with temperature control -Substrate temperature control via bipolar Johnsen-Rahbek electrostatic chuck with backside Helium cooling -CCP source 13.56 MHz up to 600 W -Thermally managed chamber liner and pump train -Optical emission spectroscopy Gases and maximum flows in positions 1 to 8 are CF4 (84 sccm), O2 (1000 sccm), He (50sccm), Ar (50 sccm), O2 (50 sccm), CHF3 (100 sccm), N2 (200 sccm) and H2 (100 sccm) respectively. The operating system is Windows 7 Professional, tool software is Plasma-Therm Cortex and the OES software is Plasma-Therm EndpointWorks Wafer size configuration is 6’’ JEIDA flatOEM Model Description
VERSALINE system models are configured to perform an array of etch and deposition processes. Ion beam technology suits a range of applications, from low, controllable damage etching to high-rate, high-aspect-ratio, deep silicon etching to difficult materials. The systems support process control through EndpointWorks®. Enhancements include data logging, automated maintenance scheduler (AMS), and SECS/GEM. Our Cortex® control system provides a stable, user-friendly control interface designed for efficiency and productivity. The VERSALINE platform’s modular design allows for flexible configuration of substrate handling for a variety of handling options, from R&D single wafer or carrier loading with a loadlock to high-volume, multi-chamber production clusters. Clear upgrade paths that leverage costs and process development make future planning easy.Documents
No documents