Lam Research is a leading supplier of plasma etch- and single-wafer clean equipment that plays a pivotal role in defining the features and capabilities of next-generation semiconductor devices. With the addition of Novellus' innovative thin-film deposition and surface preparation product lines, the new Lam Research is well-positioned within the industry to support critical technology transitions including 3D structures in advanced logic and NAND memory, as well as the scaling to 450 mm wafers.

This enhanced version of the SEQUEL system offers improved throughput performance for both thick and thin dielectric films, while occupying 40% less space than previous versions. It also provides a range of improved maintainability features and design enhancements that reduce customer facilities costs. It is available in both single and dual chamber versions.

LAM RESEARCH / NOVELLUS

CONCEPT TWO "C2" SEQUEL-S

The Maxus is available on both the Concept One and Concept Two platform.
The Maxus enhanced the nitride deposition rate while retaining superior nitride film performance. It also enhances the gap fill capability ofTEOS films by enabling fluorinated-TEOS (F-TEOS) processing for .35 micron gap fill. F-TEOS enables the customer to lower the dielectric constant to 3.7, an important capability in enhancing device performance.

CONCEPT TWO "C2" MAXUS

The NOVELLUS CONCEPT TWO SPEED-S is a module used in the Novellus Concept Two Speed system. It consists of two flanges with an eight-inch diameter each, which are equipped with two larger turbomolecular pumps. This configuration allows for high pumping speeds that are necessary to operate at the mTorr pressures required for CVD processes. The SPEED-S is an improved version of SPEED that takes up 40% less space, leading to better throughput densities for customers.

CONCEPT TWO "C2" SPEED-S

Concept Two Titanium Nitride (TiN) system will be used to form a high quality, low cost barrier/adhesion layer prior to depositing tungsten (W).

CONCEPT TWO "C2" TiN

SEQUEL EXPRESS is an advanced version of the SEQUEL system designed to deposit Novellus’ CORAL family of low-k dielectric films, as well as all other advanced films required for 0.18-micron and smaller devices. With a throughput in excess of 110 wafers per hour, SEQUEL EXPRESS delivers up to 40 percent higher capital productivity.

CONCEPT TWO "C2" SEQUEL EXPRESS

Enhanced versions of ALTUS system offer improved throughput performance for both thick and thin dielectric films, while occupying 45% less space than previous versions. It also provide a range of improved maintainability features and design enhancements that reduce customer facilities costs. It is available in both single and dual chamber version.


CONCEPT TWO "C2" ALTUS-S

CONCEPT THREE "C3" SEQUEL

The Prism MOCVD Ti-nitride system offers thin barrier solutions for high aspect ratio structures with superior barrier properties, conformality and film stability. This system is used to form a high quality, low cost barrier/adhesion layer prior to depositing tungsten.

CONCEPT TWO "C2" PRISM

The latest variant of the INOVA platform, introduced in 2007, incorporates a copper resputtering technology called HCM IONX to improve copper seed conformality, eliminate low-k dielectric damage, and extend PVD technology for seed deposition applications at 32 nm.

INOVA NExT HCM IONX

The ALTUS Max E is part of the ALTUS product family from Lam Research. It combines Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies to deposit highly conformal films for advanced tungsten metallization applications. This is important for semiconductor manufacturers as they move to smaller technology nodes and face significant scaling and integration challenges. The ALTUS Max E is designed to address these challenges by enabling complete, defect-free tungsten fill, while reducing resistivity of the bulk tungsten. It also offers high step coverage with reduced thickness films by using ALD in the deposition of WN films. Some key applications of the ALTUS Max E include tungsten plug and via fill, 3D NAND wordlines, low-stress composite interconnects, and WN barrier for via and contact metallization.

ALTUS MAX E

In 2010, Novellus introduced a new version of the INOVA designed for copper barrier-seed applications in TSVs. The IONFLO copper seed in the INOVA 3D enables a four times reduction in the seed thickness required in a 6 micron by 60 micron TSV, significantly reducing the manufacturing cost.

INOVA 3D

Novellus introduced the Concept Two-Dual ALTUS tungsten deposition system in 1994. The Dual ALTUS is designed with a dual-chamber configuration that delivers the throughput power to dramatically lower the cost of tungsten deposition. It is considered the best solution in the industry for very high volume 200mm wafer fabs producing state-of-the-art 0.35um semiconductor devices.

CONCEPT TWO "C2" DUAL ALTUS

ALTUS Max ICEFill is a product from Lam’s ALTUS family of systems that combines Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies to deposit highly conformal films for advanced tungsten metallization applications. It addresses industry challenges such as minimizing contact resistance and enabling complete, defect-free tungsten fill for nanoscale structures. The product offers benefits such as lower overall resistivity of thin W films, low-fluorine and low-stress W fill for advanced 3D NAND and DRAM, and high step coverage with reduced thickness films by using ALD in the deposition of WN films. It is used for key applications such as tungsten plug and via fill, 3D NAND wordlines, low-stress composite interconnects, and WN barrier for via and contact metallization.

ALTUS MAX ICEFill

The NOVELLUS CONCEPT TWO DUAL SEQUEL is a system that uses reactive ion-beam deposition to deposit thick films onto wafers. It has two process chambers that can provide the throughput power of twelve stations, resulting in dramatic improvements in productivity for these types of films. It is designed for high throughput deposition of thick films, such as layers before CMP (chemical-mechanical planarization), and dual layer passivation films. It also offers dual-beam operation for increased wafer-to-wafer uniformity and higher deposition rates, as well as process control capabilities and versatile materials handling for a wide range of applications.

CONCEPT TWO "C2" DUAL SEQUEL

The INOVA system, which is in the final stages of its development, is an advanced PVD system that delivers Maxfill aluminum and superior Ti/Ti-nitride film quality with excellent particle performance. Maxfill is an innovative, low-pressure, low-k compatible process for aluminum via fill. The Ti/TiN process is in production with Controlled Divergence Technology (CDS). The INOVA is a multi-chamber single wafer processing system. INOVA(TM) Tantalum films are designed to enable barriers for copper metallization.

INOVA

The NOVELLUS CONCEPT TWO is a modular, integrated production system that is capable of depositing both dielectric and conductive metal layers by combining one or more processing chambers around a common, automated robotic wafer handler. It was introduced in November 1991.

CONCEPT TWO "C2"

The ALTUS Max is a tungsten deposition system that provides advanced contact and via fill technology. It is designed to deliver high productivity and is the first ALD tungsten system to achieve a throughput of over 120 wafers per hour. This sets a new benchmark in productivity while maintaining world-class reliability and single-digit 65 nm defect performance. The ALTUS Max is a powerful tool for semiconductor manufacturing.

CONCEPT THREE "C3" ALTUS MAX

Concept Three ALTUS is a 300mm process module that delivers leading productivity and technology for contact and local interconnect applications. It uses Pulsed Nucleation Layer (PNL™) technology to integrate a high throughput nucleation layer with chemical vapor deposition (CVD bulk deposition). The Multi-Station Sequential Deposition (MSSD) architecture enables the nucleation layer and CVD fill to be performed within the same ALTUS chamber. This results in highly conformal tungsten films with improved film properties, benchmark productivity, and superior production availability. The integrated PNL and CVD approach produces the lowest Cost of Ownership tungsten deposition solution in the industry.

CONCEPT THREE "C3" ALTUS

CONCEPT THREE "C3"

The Concept Two SPEED is a Novellus product that is designed for 200 mm wafers. It features a hemispherical source that is patented and delivers high throughput and manufacturability. The hemispherical source has a single excitation frequency and coil, which makes it simpler and more elegant than other systems that require multiple coils to approach the ion uniformity level of SPEED. The Concept Two SPEED is an HDP CVD system with three chambers that can accommodate the high pumping speeds required to operate at the mTorr pressures necessary for these CVD processes .

CONCEPT TWO "C2" SPEED

SPEED Max offers significant processing flexibility and productivity advantages over the SPEED NExT system, and extends the HDP CVD application to the 45 and 32 nm technology nodes.

CONCEPT THREE "C3" SPEED MAX

Novellus Systems introduced the Concept Two-ALTUS in 1993. It is a chemical vapor deposition reactor system that combines the modular architecture of the Concept Two system with an advanced tungsten CVD process chamber. The system features a new dual loadlock cassette module with full factory automation capability to meet the high throughput requirements of high volume automated eight inch wafer fabs. This dual loadlock cassette handler permits continuous operation of the process chamber with one loadlock, while a second loadlock is simultaneously being loaded or unloaded by the operator in the cleanroom.

CONCEPT TWO "C2" ALTUS

ALTUS DirectFill is a tungsten nitride/tungsten deposition system designed for advanced contact and via-fill applications at 65 nm and below. It simplifies the tungsten deposition process by replacing the standard multi-tool Ti/TiN/W approach with a single three-module system. The advanced plug-fill technology of ALTUS DirectFill can reduce contact resistance and lower the overall cost of ownership by 50% or more when compared to existing processes. This makes it a cost-effective and efficient solution for advanced contact and via-fill applications.

ALTUS DirectFill MAX

ALTUS Max ExtremeFill, has been introduced for challenging conventional applications and 3D fill applications requiring greater than 100% step coverage, and can be upgraded onto existing ALTUS or ALTUS Max systems.

ALTUS MAX ExtremeFill

The NOVELLUS CONCEPT TWO SEQUEL is a Reactors / MOCVD system that can produce wafer size of 8 inches. It was initially shipped in a single chamber version targeted at thin dielectric films used in volume 200mm IMD production applications. 

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

LAM RESEARCH / NOVELLUS

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ALTUS MAX ICEFill

CONCEPT TWO "C2" DUAL SEQUEL

CONCEPT TWO "C2" DUAL ALTUS

CONCEPT TWO "C2" MAXUS

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