Designs, manufactures and services ion implantation and other processing equipment used in the fabrication of semiconductor chips.

The Optima MD is the only low energy, mid-dose ion implanter for all channel engineering applications in the low-dose and mid-dose regimes. The single wafer productivity-driven platform covers traditional medium current processes as well as emerging low energy mid-dose HALO implants.


AXCELIS

OPTIMA MD

The GSD/200E2 is a 200mm standard high current implanter with a maximum energy of 180KeV. It offers reliable, high productivity and exceptional product control with unmatched cost of ownership. It meets advanced manufacturing requirements through the 180nm node and maintains high throughput for quad implants used for trench doping. It features an Extended Life Source, a Xenon-based Plasma Electron Flood, and real-time dose control for consistent low doses.

GSD 200E2

NV GSD/HE

The GSD/HE is a high-energy implant device that is designed to maximize productivity and flexibility in a wide range of implant applications, including 200mm high energy implantation for logic and memory chips. With an energy range from 10keV to over 3MeV, it can perform all retrograde wells and channel implants in a chain. The device features exceptional beam purity, thanks to its patented linear acceleration technology, and is built on a production-proven GSD wafer-handling architecture. It is also easy to access and maintain, which helps to increase productivity and reduce the cost of ownership. Additionally, the GSD/HE can be used as a backup for medium current implantation, further increasing ROI.

GSD HE

PURION H200

NV 6200AV

NV GSD 200E

NV-8200P, high current, parallel beam scan, uses GSD-A end station.

NV 8200P

High energy implanter. 
 processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability.
 A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.

NV GSD HE3

Axcelis Technologies' 8250 medium current line uses an ultra-pure, parallel beam design enhanced by extremely precise wafer positioning, enabling the minute detailing of transistors. The 8250 provides the advanced process capabilities necessary for medium current implants. Incorporating several key productivity enhancements in its design, it offers enhanced yield and serial processing advantages. This system is a fully automated, 200mm, serial processing system designed to maximize productivity and minimize all forms of contamination. Production-proven beam optics and wafer position control deliver pure, parallel and repeatable beams. The 8250 is the industry's only medium current system to incorporate a final energy filter, ensuring maximum beam purity over the entire energy range of multiply-charged species up to 750keV. New features such as the extended life source (ELS), electrostatic chuck, fully integrated statistical process control (SPC), and slit load lock process chamber allow the 8250 to provide superior processing capability at the lowest cost of ownership.

NV 8250

200mm high tilt and medium current applications for all chips.

NV 8250HT

The Eaton/Axcelis GSD 200 is a high current implanter that can handle wafers up to 8 inches in size and has a maximum energy of 180KeV. It is part of the GSD platform, which is known for being the longest manufactured and supported batch ion implanter in the industry. Ion implantation, the technology used by this machine, involves bombarding ionized species into the first atomic layers of a solid to introduce different species into a substrate. This process can change the chemical or tribological properties of the surface, such as hardness, wear resistance, resistance to chemical attack, and reduced friction. It can also improve the oxidation resistance of coatings by forming a dense Al2O3 scale. This technology is widely used in micro-electronics, optics, bio-materials, and doped semiconductor materials.

GSD 200

The NV-GSD III-90 high-current ion implanter serving as the global standard, which achieved high throughput and a compact size with the adoption of a newly developed beam line.

NV GSD III 90

The AXCELIS NV 10-160 is a high-energy ion implanter, specifically designed for implanting ions into bare silicon wafers. It operates at 60 keV energy, and its implantation process allows for precise dosing in the range of 1 to 5∙10^15 ions per square centimeter. After implantation, the wafers can be annealed at 600°C for 20 minutes to activate and optimize the implanted ions' performance. The AXCELIS NV 10-160 is a powerful tool used in semiconductor manufacturing for creating controlled doping profiles and modifying material properties in silicon wafers, essential for producing advanced semiconductor devices.

NV 10 160

EATON NOVA / AXCELIS NV 10-80 is a high Ion Implanters system. NV 10-80 can be used with 6” wafer size.

NV 10 80

NV-MC3 300mm high tilt and medium current applications for all chips.

NV MC3

COMPACT 2

The Axcelis GSD 100 is an ion implanter used in the semiconductor industry for 8-inch wafers. It is part of the GSD Series of implanters, which is the industry benchmark for the longest manufactured and supported batch ion implanter.

GSD 100

Optima HD product (for high current applications) a single wafer was introduced in 2006, which was upgraded to the Optima HDx in 2009.

OPTIMA HDx

Purion M medium current ion implant system. This system offer industry leading purity, precision and productivity through enhanced single magnet scanned spot beam architecture at a higher productivity (500 wafer per hour throughput) and lower cost of ownership than competitive offerings, in addition to other advantages.

PURION M

NVGSD-80 high-current ion implanter is equipped with a loadlock high-throughput end station (Gyro Super Disk or GSD).

NV GSD 80

HC3 was co-developed with Axcelis' joint-venture partner Sumitomo Eaton Nova (SEN), representing a second-generation 300-mm high-current system.

NV GSD HC3

**PARTS**

NV GSD III

The Optima HD is a high dose ion implanter that delivers precise and productive implants across a broad applications base, including source/drain, source/drain extension and poly-doping transistor forming applications. The Optima HD is also available with Hydrogen and molecular implant capabilities.

OPTIMA HD

UHD 200MM DISK

NV 6200A

NV GSD

The NV-GSD III-80 is a high-current ion implanter that has become a de facto standard in the industry. It is versatile, supporting a medium-current range and various applications, thanks to its post-deflection acceleration system. It caters to different wafer sizes, supporting 5, 6, and 8-inch wafers. The implanter offers a wide range of implantation energy from 2 to 180 keV, facilitated by its unique acceleration mechanism. It also features a reliable batch transfer system for smooth operations and highly effective throughput for increased productivity. The NV-GSD III-80 ensures precise results with its reliable high-dose control accuracy and maintains the integrity of the process with its high beam quality that results in low metal contamination and low cross-contamination.

NV GSD III 180

OPTIMA HDxT

SEGMENTED DISK

NV 8250P

NV GSD 200EE

Clamped Disk

1169072

NV 6200

1519520

1-keV class, low-energy high-current ion implanter.

NV GSD LE

The NV-GSD-A high-current ion implanter with increased beam current and improved throughput with 200-mm wafers.

NV GSD A

NV 8200

1141466

Paradigm XE, high energy version, is the standard tool offering for 300 mm wafers.

PARADIGM XE

D-1400190

PURION GP

GSD 160E2

Purion XE, high energy system, combines Axcelis' production-proven RF Linac high energy, spot beam technology with the Purion platform. 

PURION XE

the Optima XE, was released in the fourth quarter of 2007 and upgraded to the Optima XEx in 2009. The Optima XEx combines Axcelis' production-proven RF Linac high energy, spot beam technology with a high-speed, state-of-the-art single wafer endstation, enabling unmatched throughput. Axcelis' advanced spot beam ensures that all points across the wafer see the same beam at the same beam angle, resulting in exceptional process control and maximum yield. 

OPTIMA XEx

Summit 300XT RTP system contains a number of innovations for a range of 300-mm processing applications, including annealing of ultra-shallow junctions in ICs with 100-nm (0.10-micron) device features.

SUMMIT 300XT

Purion H is a high current ion implanter. The Purion H fulfills all traditional high current requirements while extending beyond traditional high current energy and dose ranges. In order to maximize utilization and flexibility, the Purion H can process some traditional mid current implants. In addition, the Purion H is extendable into ultra-low energy applications to satisfy future process requirements including leakage current performance. 

PURION H

The LEX3 300-mm extremely low-energy ion, high-current implanter.

LEX3

The Optima HE is a multi-wafer high energy tools.

OPTIMA HE

RF RESONATOR

SUMMIT 300

 NV-GSD III-90E low-energy, beam current enhanced, high-current ion implanter.

NV GSD III 90E

The Axcelis GSD 160 is a high energy ion implanter that is part of the GSD Series of implanters. The GSD Series is known for being the industry benchmark for the longest manufactured and supported batch ion implanter.

GSD 160

200mm high current implanter for low energy applications.

GSD III LED

NV 20A

The GSD/VHE is a high-energy implanter that is currently the most powerful in the industry. It has an extended energy range of up to 5MeV and features quad implant capability, superior cooling, and medium current performance. This makes it a reliable solution for both manufacturing and research and development applications. It is particularly well-suited for the creation of advanced integrated circuits that require deep twin or triple wells and buried layer structures. One of the key advantages of the GSD/VHE is its unmatched beam purity, which is achieved through the use of patented linear acceleration technology. This results in exceptional productivity and a low cost of ownership. The GSD/VHE is capable of performing 200mm very high energy implantation for logic, memory chips, and FLASH memory chips.

GSD VHE

NV GSD A 80

Purion XEmax—Dual LINAC design with patented Boost Technology for the highest energies up to 15 MeV.

PURION XEmax

GSD200E/80

The Optima XE combines Axcelis' production-proven RF Linac high energy, spot beam technology with a high-speed, state-of-the-art single wafer endstation, enabling unmatched throughput. Axcelis' advanced spot beam ensures that all points across the wafer see the same beam at the same beam angle, resulting in exceptional process control and maximum yield.

OPTIMA XE

PURION EXE

OPTIMA MDxt

NV-10 high-current ion implanter supporting 150-mm wafers.

NV 10

GSD ULTRA

NV 1000

NV 1 40

HC3 ULTRA

PARADIGM

NV-10SD high-current ion implanter is equipped with a single large wafer-disk end station (Super Disk or SD).

NV 10SD

SUMMIT XT

SUMMIT 200

The LEX3-II high-current ion implanter supporting 300-mm wafers with increased beam current at an extremely low energy.

AXCELIS

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