The AIXTRON Group provides deposition equipment to the semiconductor industry. They are used for a wide range of manufacturing high-performance components for electronic and optoelectronic applications based on compound or organic semiconductor materials. These components are used in a variety of innovative applications, technologies and industries. These include, for example, LED and display technology, data transmission, sensor technology, energy management and conversion, communication, signal and lighting technology, and many other sophisticated high-tech applications.

AIXTRON

CRIUS II

The AIXTRON CRIUS is a metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE, a leading provider of deposition equipment used in the semiconductor industry. The CRIUS series is designed for the epitaxial growth of compound semiconductor materials, offering advanced features and capabilities. 

CRIUS

Close Coupled Showerhead 6x2 inch
Deposition system for compound semiconductors

6x2 CCS

**PARTS**

The AIXTRON AIX 2800 G4 is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. This cutting-edge system is specifically designed for epitaxial growth of compound semiconductor materials, with a primary focus on producing high-performance optoelectronic devices like light-emitting diodes (LEDs) and laser diodes. Its precise and controlled growth process enables the creation of high-quality semiconductor layers, making it a crucial tool for manufacturing optoelectronic components used in various applications, including lighting, displays, telecommunications, and other high-performance electronic devices.

AIX 2800 G4

AIX 2600 G3

AIX G5+ 

The AIXTRON G4 is a series of cutting-edge metal-organic chemical vapor deposition (MOCVD) systems developed by AIXTRON SE, a leading provider of deposition equipment in the semiconductor industry. As the latest generation in the AIXTRON MOCVD systems, the G4 series introduces advanced features and capabilities for epitaxial growth of compound semiconductor materials. This state-of-the-art series is designed to deliver precise and controlled growth processes, making it a crucial tool for manufacturing a wide range of semiconductor devices, including optoelectronic components like LEDs, laser diodes, and high-power transistors, contributing to advancements in various electronic applications.

The AIXTRON G3 is a commercial MOCVD (Metal-Organic Chemical Vapor Deposition) system featuring a planetary cold-wall reactor design. This system exhibits an abrupt temperature gradient near the substrate, with the highest temperature at the substrate and a rapid decrease along the surface normal direction. This controlled temperature profile ensures precise and efficient epitaxial growth of compound semiconductor materials, making it suitable for various applications, including the production of optoelectronic devices like LEDs and laser diodes.

The AIXTRON AIX 2800 G4 HT (High-Temperature) is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. It is designed specifically for high-temperature processing and the epitaxial growth of compound semiconductor materials.

AIX 2800 G4 HT

CRIUS-R

AIX 2400 G2

The AIXTRON AIX R6 is a Metal Organic Chemical Vapor Deposition (MOCVD) system specifically designed for producing LEDs based on Gallium Nitride (GaN). This advanced system offers the capability to accommodate different wafer configurations, with options available in 12x6-inch, 31x4-inch, and 121x2-inch setups. Its precise and controlled growth process enables the epitaxial growth of high-quality Gallium Nitride layers, making it a crucial tool for efficient and reliable LED production for various lighting and display applications.

AIX R6

The AIXTRON AIX 2400 G3 is an advanced metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. This cutting-edge system is specifically designed for epitaxial growth of compound semiconductor materials, with a primary focus on producing optoelectronic devices like light-emitting diodes (LEDs) and laser diodes. Its precise and controlled growth process enables the creation of high-quality semiconductor layers, making it a crucial tool for manufacturing optoelectronic components used in various applications, including lighting, displays, and telecommunications.

AIX 2400 G3

AIX 2600 G3, could accommodate 24 2-inch wafers.

AIX 2600 G3 HT

AIX G5 WW C Planetary Reactor for 150 mm SiC 

AIX G5 WW C

G10-AsP

AIX 2400 G3 HT

AIX 2000HT

AIXTRON´s VP508GFR Hot-Wall tube reactor offers single wafer 4-inch and optional 6-inch capacity in a dual chamber configuration for enhanced productivity.

VP508GFR

MOVPE Planetary Reactor for Wafer Deposition

AIX G5 HT TM

VP-2400HW

Deposition System for Compound Semiconductors.
The best reactor for HVM of GaAs/InP based Optoelectronics and RF applications

AIX 2800G4-TM

Key features of the new AIX 2400/2600G3 include its high uptime and easy serviceability. These aspects are very important as mass production of advanced. In terms of serviceability too, the AIX 2400/ 2600G3 is very much the state-of-the-art. Maintenance is carried out within the glovebox so avoiding contamination of the reactor with air and reducing down-time. 

AIX 2400/2600 G3

5th Generation GaN Planetary Reactor AIX 2800 G5 HT (8 x 6-inch).

AIX 2800 G5 HT

AIXTRON offers the world's largest MOVPE reactor, the AIX 3000 with a maximum capacity of 95 x 2" wafers, or equivalent area. 

AIX 3000

The G5 series reactors typically feature AIXTRON's Planetary Reactor technology, which allows for high-quality, uniform growth of films. This is achieved by rotating the substrate wafers around a central point, similar to the planets orbiting the sun, while gases are injected into the chamber.

AIX G5

AIX 200/4RFS

CRIUS II-XL

AIX 2800 G4 ICHT

 AIX 2000

G10-SiC

The AIXTRON G4 HT (High-Temperature) is a state-of-the-art metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE. This advanced system is specifically designed for epitaxial growth of compound semiconductor materials, with a particular focus on applications that require high-temperature processing. Its precise and controlled growth capabilities enable the creation of high-quality semiconductor layers, making it a vital tool for manufacturing cutting-edge optoelectronic devices, high-power transistors, and other semiconductor components requiring high-temperature processing for superior performance.

G4 HT

Aix200 is a horizontal metal organic chemical vapor deposition (MOCVD) system from Aixtron.

AIX 200

Close Coupled Showerhead (CCS) system. Intended for research on gallium nitride (GaN)-based deep-ultraviolet (DUV) optoelectronic devices.



3x2 CCS

CRIUS II CCS IC-2

AIX 2600 G3 IC

AIX G5+ C Planetary Reactor for GaN on 150/200 mm Si
GaN on Si HEMT thickness uniformity 0.44 % standard deviation without edge exclusion.
Mean thickness 3.37 µm.

AIXTRON

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