Description
No descriptionConfiguration
HfO2 deposition: − Temperature: 320 ºC − Pressure: 0.5 Torr − Precursor: TEMAH (Tetrakisethymethyllaminohafnium) − Precursor carrier gas: Ar − Process purge gas: Ar − HfO2 reaction: TEMAH half-reaction + O3 half-reaction Al2O3 deposition: − Temperature: 250 ºC − Pressure: 0.5 Torr − Precursor: TMA (Trimethylaluminum) − Precursor carrier gas: Ar − Process purge gas: Ar − Al2O3 reaction: TMA half-reaction + O3 half-reaction TiN deposition: − Temperature: 470 ºC − Pressure: 0.8 Torr − Precursor: TiCl4 (Titanium tetrachloride) − Precursor carrier gas: Ar − Process purge gas: Ar − TiN reaction: TiCl4 half-reaction + NH3 half-reactionOEM Model Description
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AIXTRON / GENUS
StrataGem 200
Verified
CATEGORY
ALD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Installed / Running
Product ID:
104535
Wafer Sizes:
8"/200mm
Vintage:
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
AIXTRON / GENUS
StrataGem 200
CATEGORY
ALD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Installed / Running
Product ID:
104535
Wafer Sizes:
8"/200mm
Vintage:
2010
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
HfO2 deposition: − Temperature: 320 ºC − Pressure: 0.5 Torr − Precursor: TEMAH (Tetrakisethymethyllaminohafnium) − Precursor carrier gas: Ar − Process purge gas: Ar − HfO2 reaction: TEMAH half-reaction + O3 half-reaction Al2O3 deposition: − Temperature: 250 ºC − Pressure: 0.5 Torr − Precursor: TMA (Trimethylaluminum) − Precursor carrier gas: Ar − Process purge gas: Ar − Al2O3 reaction: TMA half-reaction + O3 half-reaction TiN deposition: − Temperature: 470 ºC − Pressure: 0.8 Torr − Precursor: TiCl4 (Titanium tetrachloride) − Precursor carrier gas: Ar − Process purge gas: Ar − TiN reaction: TiCl4 half-reaction + NH3 half-reactionOEM Model Description
None ProvidedDocuments
No documents