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AIXTRON / GENUS StrataGem 200

Description

No description

Configuration

HfO2 deposition: − Temperature: 320 ºC − Pressure: 0.5 Torr − Precursor: TEMAH (Tetrakisethymethyllaminohafnium) − Precursor carrier gas: Ar − Process purge gas: Ar − HfO2 reaction: TEMAH half-reaction + O3 half-reaction Al2O3 deposition: − Temperature: 250 ºC − Pressure: 0.5 Torr − Precursor: TMA (Trimethylaluminum) − Precursor carrier gas: Ar − Process purge gas: Ar − Al2O3 reaction: TMA half-reaction + O3 half-reaction TiN deposition: − Temperature: 470 ºC − Pressure: 0.8 Torr − Precursor: TiCl4 (Titanium tetrachloride) − Precursor carrier gas: Ar − Process purge gas: Ar − TiN reaction: TiCl4 half-reaction + NH3 half-reaction

OEM Model Description

None Provided

Documents

No documents

AIXTRON / GENUS

StrataGem 200

verified-listing-icon

Verified

CATEGORY

ALD

Last Verified: Over 60 days ago

Key Item Details

Condition:

Used

Operational Status:

Installed / Running

Product ID:

104535

Wafer Sizes:

8"/200mm

Vintage:

2010

Have Additional Questions?

Logistics Support

Available

Money Back Guarantee

Available

Transaction Insured by Moov

Available

Refurbishment Services

Available

Similar Listings

AIXTRON / GENUS StrataGem 200

AIXTRON / GENUS

StrataGem 200

Vintage: 2010Condition: Used

Last VerifiedOver 60 days ago

AIXTRON / GENUS

StrataGem 200

verified-listing-icon

Verified

CATEGORY

ALD

Last Verified: Over 60 days ago

listing-photo-ce42bfa90d314e52bd43a58fd17612e5-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/76223/ce42bfa90d314e52bd43a58fd17612e5/f8697c43178d46bfba54d4345b305921_s84852969_mw.jpg

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Key Item Details

Condition:

Used

Operational Status:

Installed / Running

Product ID:

104535

Wafer Sizes:

8"/200mm

Vintage:

2010

Have Additional Questions?

Logistics Support

Available

Money Back Guarantee

Available

Transaction Insured by Moov

Available

Refurbishment Services

Available

Description

No description

Configuration

HfO2 deposition: − Temperature: 320 ºC − Pressure: 0.5 Torr − Precursor: TEMAH (Tetrakisethymethyllaminohafnium) − Precursor carrier gas: Ar − Process purge gas: Ar − HfO2 reaction: TEMAH half-reaction + O3 half-reaction Al2O3 deposition: − Temperature: 250 ºC − Pressure: 0.5 Torr − Precursor: TMA (Trimethylaluminum) − Precursor carrier gas: Ar − Process purge gas: Ar − Al2O3 reaction: TMA half-reaction + O3 half-reaction TiN deposition: − Temperature: 470 ºC − Pressure: 0.8 Torr − Precursor: TiCl4 (Titanium tetrachloride) − Precursor carrier gas: Ar − Process purge gas: Ar − TiN reaction: TiCl4 half-reaction + NH3 half-reaction

OEM Model Description

None Provided

Documents

No documents

Similar Listings

AIXTRON / GENUS StrataGem 200

AIXTRON / GENUS

StrataGem 200

ALDVintage: 2010Condition: UsedLast Verified:Over 60 days ago