Description
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-Wafer size：12inch notch type -Exposing source: KrF(Wavelength 248nm、Cymer ELS-7300) -Laser on another floor -Right side only Console -Surface illumination (standard): 36000[W/㎡]or more -R Type Inline direction -Reduction ratio： 1：4 -Throughput： AGA 8shot 110wafer/hour or more ※Step pitch 26nm×33mm，64 shot (300mm wafers) Exposure amount 300J/m2 -Resolution： 120nm or less -Alignment accuracy： 20nm or less (M+ 3σ) -Lighting NA： Three equipped with Squeezing ①NA：0.80/σ0.80 CONV ②NA：0.80/σ0.40 CONV ③NA：0.80/SiB2 -Projection lens NA： Variable 0.55~0.80 -Exposure range (Scan Field)：26×33mm -Wafer alignment： AGA(Off Axis Scope) -Reticle library： Max7sheet -Cool plate before exposure(WTC)： None -Options： 6"PPC Unit、6"Reticle Barcode Reader(2D)、Signal Tower(4color、Relay FOUP UnitOEM Model Description
The CANON FPA 5000 ES4 scanner is geared for both 200mm and 300mm wafer fabs. This lithography system is suitable for applications at the 100-nm (0.10-micron) and below. The FPA 5000-ES4 has high-throughput rates of 110 wafers per hour (wph) on 300mm and 160wph on 200mm. The s an expansion of Canon's high NA, 248-nm tools for mix-and-match applicationsDocuments
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CANON
FPA-5000ES4
Verified
CATEGORY
193 nm Step and Scan
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
24049
Wafer Sizes:
12"/300mm
Vintage:
2003
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Logistics Support
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Money Back Guarantee
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Transaction Insured by Moov
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Refurbishment Services
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CANON
FPA-5000ES4
Verified
CATEGORY
193 nm Step and Scan
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
24049
Wafer Sizes:
12"/300mm
Vintage:
2003
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
-Wafer size：12inch notch type -Exposing source: KrF(Wavelength 248nm、Cymer ELS-7300) -Laser on another floor -Right side only Console -Surface illumination (standard): 36000[W/㎡]or more -R Type Inline direction -Reduction ratio： 1：4 -Throughput： AGA 8shot 110wafer/hour or more ※Step pitch 26nm×33mm，64 shot (300mm wafers) Exposure amount 300J/m2 -Resolution： 120nm or less -Alignment accuracy： 20nm or less (M+ 3σ) -Lighting NA： Three equipped with Squeezing ①NA：0.80/σ0.80 CONV ②NA：0.80/σ0.40 CONV ③NA：0.80/SiB2 -Projection lens NA： Variable 0.55~0.80 -Exposure range (Scan Field)：26×33mm -Wafer alignment： AGA(Off Axis Scope) -Reticle library： Max7sheet -Cool plate before exposure(WTC)： None -Options： 6"PPC Unit、6"Reticle Barcode Reader(2D)、Signal Tower(4color、Relay FOUP UnitOEM Model Description
The CANON FPA 5000 ES4 scanner is geared for both 200mm and 300mm wafer fabs. This lithography system is suitable for applications at the 100-nm (0.10-micron) and below. The FPA 5000-ES4 has high-throughput rates of 110 wafers per hour (wph) on 300mm and 160wph on 200mm. The s an expansion of Canon's high NA, 248-nm tools for mix-and-match applicationsDocuments
No documents
Similar Listings
View AllNo Similar Listings