Description
No descriptionConfiguration
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The Canon Stepper FPA-3000 EX3 is a photolithography tool used in semiconductor manufacturing. It has a 6" square quartz reticle and can handle 4” to 8” wafers. The projection optics have a 1/5X magnification and a numerical aperture of .40-.60. The exposure light is KrF (248nm). The illumination system uses a KrF Cymer/ELS4300 light source with an output of 7.2W. The printing performance has a resolution of <0.25μm and depth of focus of >.70μm. The alignment system has reticle rotation accuracy of <±0.01μm on wafer and wafer alignment of <0.055μm mean + 3sigma. The focus/leveling system has focus repeatability of <0.10μm (3sigma). The stage has step accuracy of <0.04μm (3sigma). The throughput is >73 wafers/hour for Φ6", 22mm, 32 shots and >53 wafers/hour for Φ8", 22mm, 60 shots.Documents
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CANON
FPA-3000EX3
Verified
CATEGORY
Steppers & Scanners
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
72683
Wafer Sizes:
Unknown
Vintage:
1998
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
CANON
FPA-3000EX3
CATEGORY
Steppers & Scanners
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
72683
Wafer Sizes:
Unknown
Vintage:
1998
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
No ConfigurationOEM Model Description
The Canon Stepper FPA-3000 EX3 is a photolithography tool used in semiconductor manufacturing. It has a 6" square quartz reticle and can handle 4” to 8” wafers. The projection optics have a 1/5X magnification and a numerical aperture of .40-.60. The exposure light is KrF (248nm). The illumination system uses a KrF Cymer/ELS4300 light source with an output of 7.2W. The printing performance has a resolution of <0.25μm and depth of focus of >.70μm. The alignment system has reticle rotation accuracy of <±0.01μm on wafer and wafer alignment of <0.055μm mean + 3sigma. The focus/leveling system has focus repeatability of <0.10μm (3sigma). The stage has step accuracy of <0.04μm (3sigma). The throughput is >73 wafers/hour for Φ6", 22mm, 32 shots and >53 wafers/hour for Φ8", 22mm, 60 shots.Documents
No documents