Description
Additional Options Additional MultiChem GIS chemistries: IEE, EE, Pt, W, C Integrated EDS and EBSD detectorsConfiguration
Helios 450HP (upgraded to a G3 system) Elstar UC Electron Column Electron beam range: 350 V to 30 kV Tomahawk Ion Column Ion beam voltage: 0.5 to 30 kV Beam current: 1 pA to 65 nA TLD, ETD, and ICE detectors EasyLift with rotation MultiChem GIS with Pt or W included Integrated plasma cleaner Full Piezo UHR stage Windows 7 and XT 10 Installation and operation training includedOEM Model Description
The 450HP and 1200HP DualBeam systems include new capability that meets the critical requirements for semiconductor process development at the 28nm device geometry node and below. The 450HP model can accommodate samples up to 100mm wafers.Documents
No documents
CATEGORY
SEM / FIB
Last Verified: 15 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
150314
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
THERMOFISHER SCIENTIFIC / FEI / PHILIPS
HELIOS NANOLAB 450HP
CATEGORY
SEM / FIB
Last Verified: 15 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
150314
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Additional Options Additional MultiChem GIS chemistries: IEE, EE, Pt, W, C Integrated EDS and EBSD detectorsConfiguration
Helios 450HP (upgraded to a G3 system) Elstar UC Electron Column Electron beam range: 350 V to 30 kV Tomahawk Ion Column Ion beam voltage: 0.5 to 30 kV Beam current: 1 pA to 65 nA TLD, ETD, and ICE detectors EasyLift with rotation MultiChem GIS with Pt or W included Integrated plasma cleaner Full Piezo UHR stage Windows 7 and XT 10 Installation and operation training includedOEM Model Description
The 450HP and 1200HP DualBeam systems include new capability that meets the critical requirements for semiconductor process development at the 28nm device geometry node and below. The 450HP model can accommodate samples up to 100mm wafers.Documents
No documents