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THERMOFISHER SCIENTIFIC / FEI / PHILLIPS HELIOS NANOLAB 450
    Description
    No description
    Configuration
    Process Type: FA SEMs/TEMs/Dual Beams Specifications: Electron Source – TFE Elstar electron column with UC monochromator Ion Source – Tomahawk • Landing Voltage – 50 V - 30 kV SEM – 500 V - 30 kV FIB • STEM resolution – 0.8 nm • SEM resolution – Optimal WD 0.8 nm @ 15 kV 0.8 nm @ 2 kV 0.9 nm @ 1 kV 1.5 nm @ 200 V with beam decleration – Coincident WD 0.8 nm @ 15 kV 0.9 nm @ 5 kV 1.2 nm @ 1 kV • Ion beam resolution at coincident point – 4.5 nm @ 30 kV using preferred statistical method – 2.5 nm @ 30 kV using selective edge method • EDS resolution – < 30 nm on thinned sample • Stage – 5 axis all piezo motorized – 100 mm XY motion – Loadlock (80 mm max. diameter) – Omniprobe • Sample types – Wafer pieces, packaged parts, TEM – grids, whole wafers up to 100 mm • Max. sample size – 80 mm diameter with full travel • User interface – Windows® GUI with integrated SEM, FIB, GIS, and simultaneous patterning and imaging mode • GIS – available and on request • Lift out – Omniprobe 200.2
    OEM Model Description
    The FEI Helios NanoLab 450 is a DualBeam™ system designed for imaging, analysis, and TEM sample preparation in semiconductor failure analysis labs. It is intended for advanced semiconductor labs that face various challenges, such as decreasing dimensions at sub 32-nm nodes, advanced packaging methods, and an increased number of samples that require TEM imaging. The Helios NanoLab series combines the Elstar electron column with UC technology for high-resolution and high-contrast imaging and the TomahawkTM ion column for quick and accurate sample cross-sectioning. The Helios NanoLab 450S is well-suited for high throughput and high-resolution S/TEM sample preparation, imaging, and analysis. Its unique FlipStage and in-situ STEM detector can switch from sample preparation to STEM imaging in seconds without breaking the vacuum or exposing the sample to the environment.
    Documents

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    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS

    HELIOS NANOLAB 450

    verified-listing-icon

    Verified

    CATEGORY
    SEM / FIB

    Last Verified: 26 days ago

    Key Item Details

    Condition:

    Refurbished


    Operational Status:

    Unknown


    Product ID:

    117461


    Wafer Sizes:

    Unknown


    Vintage:

    Unknown


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    Similar Listings
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    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS HELIOS NANOLAB 450

    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS

    HELIOS NANOLAB 450

    SEM / FIB
    Vintage: 0Condition: Refurbished
    Last Verified26 days ago

    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS

    HELIOS NANOLAB 450

    verified-listing-icon
    Verified
    CATEGORY
    SEM / FIB
    Last Verified: 26 days ago
    listing-photo-431d162e6c7a4823a8a36545a8294c65-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    Key Item Details

    Condition:

    Refurbished


    Operational Status:

    Unknown


    Product ID:

    117461


    Wafer Sizes:

    Unknown


    Vintage:

    Unknown


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    Description
    No description
    Configuration
    Process Type: FA SEMs/TEMs/Dual Beams Specifications: Electron Source – TFE Elstar electron column with UC monochromator Ion Source – Tomahawk • Landing Voltage – 50 V - 30 kV SEM – 500 V - 30 kV FIB • STEM resolution – 0.8 nm • SEM resolution – Optimal WD 0.8 nm @ 15 kV 0.8 nm @ 2 kV 0.9 nm @ 1 kV 1.5 nm @ 200 V with beam decleration – Coincident WD 0.8 nm @ 15 kV 0.9 nm @ 5 kV 1.2 nm @ 1 kV • Ion beam resolution at coincident point – 4.5 nm @ 30 kV using preferred statistical method – 2.5 nm @ 30 kV using selective edge method • EDS resolution – < 30 nm on thinned sample • Stage – 5 axis all piezo motorized – 100 mm XY motion – Loadlock (80 mm max. diameter) – Omniprobe • Sample types – Wafer pieces, packaged parts, TEM – grids, whole wafers up to 100 mm • Max. sample size – 80 mm diameter with full travel • User interface – Windows® GUI with integrated SEM, FIB, GIS, and simultaneous patterning and imaging mode • GIS – available and on request • Lift out – Omniprobe 200.2
    OEM Model Description
    The FEI Helios NanoLab 450 is a DualBeam™ system designed for imaging, analysis, and TEM sample preparation in semiconductor failure analysis labs. It is intended for advanced semiconductor labs that face various challenges, such as decreasing dimensions at sub 32-nm nodes, advanced packaging methods, and an increased number of samples that require TEM imaging. The Helios NanoLab series combines the Elstar electron column with UC technology for high-resolution and high-contrast imaging and the TomahawkTM ion column for quick and accurate sample cross-sectioning. The Helios NanoLab 450S is well-suited for high throughput and high-resolution S/TEM sample preparation, imaging, and analysis. Its unique FlipStage and in-situ STEM detector can switch from sample preparation to STEM imaging in seconds without breaking the vacuum or exposing the sample to the environment.
    Documents

    No documents

    Similar Listings
    View All
    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS HELIOS NANOLAB 450

    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS

    HELIOS NANOLAB 450

    SEM / FIBVintage: 0Condition: RefurbishedLast Verified:26 days ago