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THERMOFISHER SCIENTIFIC / FEI / PHILLIPS HELIOS NANOLAB 450
  • THERMOFISHER SCIENTIFIC / FEI / PHILLIPS HELIOS NANOLAB 450
  • THERMOFISHER SCIENTIFIC / FEI / PHILLIPS HELIOS NANOLAB 450
  • THERMOFISHER SCIENTIFIC / FEI / PHILLIPS HELIOS NANOLAB 450
Description
No description
Configuration
Process Type: FA SEMs/TEMs/Dual Beams Specifications: Electron Source – TFE Elstar electron column with UC monochromator Ion Source – Tomahawk • Landing Voltage – 50 V - 30 kV SEM – 500 V - 30 kV FIB • STEM resolution – 0.8 nm • SEM resolution – Optimal WD 0.8 nm @ 15 kV 0.8 nm @ 2 kV 0.9 nm @ 1 kV 1.5 nm @ 200 V with beam decleration – Coincident WD 0.8 nm @ 15 kV 0.9 nm @ 5 kV 1.2 nm @ 1 kV • Ion beam resolution at coincident point – 4.5 nm @ 30 kV using preferred statistical method – 2.5 nm @ 30 kV using selective edge method • EDS resolution – < 30 nm on thinned sample • Stage – 5 axis all piezo motorized – 100 mm XY motion – Loadlock (80 mm max. diameter) – Omniprobe • Sample types – Wafer pieces, packaged parts, TEM – grids, whole wafers up to 100 mm • Max. sample size – 80 mm diameter with full travel • User interface – Windows® GUI with integrated SEM, FIB, GIS, and simultaneous patterning and imaging mode • GIS – available and on request • Lift out – Omniprobe 200.2
OEM Model Description
The FEI Helios NanoLab 450 is a DualBeam™ system designed for imaging, analysis, and TEM sample preparation in semiconductor failure analysis labs. It is intended for advanced semiconductor labs that face various challenges, such as decreasing dimensions at sub 32-nm nodes, advanced packaging methods, and an increased number of samples that require TEM imaging. The Helios NanoLab series combines the Elstar electron column with UC technology for high-resolution and high-contrast imaging and the TomahawkTM ion column for quick and accurate sample cross-sectioning. The Helios NanoLab 450S is well-suited for high throughput and high-resolution S/TEM sample preparation, imaging, and analysis. Its unique FlipStage and in-situ STEM detector can switch from sample preparation to STEM imaging in seconds without breaking the vacuum or exposing the sample to the environment.
Documents

No documents

CATEGORY
SEM / FIB

Last Verified: Over 60 days ago

Key Item Details

Condition:

Refurbished


Operational Status:

Unknown


Product ID:

117461


Wafer Sizes:

Unknown


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

THERMOFISHER SCIENTIFIC / FEI / PHILLIPS

HELIOS NANOLAB 450

verified-listing-icon
Verified
CATEGORY
SEM / FIB
Last Verified: Over 60 days ago
listing-photo-431d162e6c7a4823a8a36545a8294c65-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
Key Item Details

Condition:

Refurbished


Operational Status:

Unknown


Product ID:

117461


Wafer Sizes:

Unknown


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No description
Configuration
Process Type: FA SEMs/TEMs/Dual Beams Specifications: Electron Source – TFE Elstar electron column with UC monochromator Ion Source – Tomahawk • Landing Voltage – 50 V - 30 kV SEM – 500 V - 30 kV FIB • STEM resolution – 0.8 nm • SEM resolution – Optimal WD 0.8 nm @ 15 kV 0.8 nm @ 2 kV 0.9 nm @ 1 kV 1.5 nm @ 200 V with beam decleration – Coincident WD 0.8 nm @ 15 kV 0.9 nm @ 5 kV 1.2 nm @ 1 kV • Ion beam resolution at coincident point – 4.5 nm @ 30 kV using preferred statistical method – 2.5 nm @ 30 kV using selective edge method • EDS resolution – < 30 nm on thinned sample • Stage – 5 axis all piezo motorized – 100 mm XY motion – Loadlock (80 mm max. diameter) – Omniprobe • Sample types – Wafer pieces, packaged parts, TEM – grids, whole wafers up to 100 mm • Max. sample size – 80 mm diameter with full travel • User interface – Windows® GUI with integrated SEM, FIB, GIS, and simultaneous patterning and imaging mode • GIS – available and on request • Lift out – Omniprobe 200.2
OEM Model Description
The FEI Helios NanoLab 450 is a DualBeam™ system designed for imaging, analysis, and TEM sample preparation in semiconductor failure analysis labs. It is intended for advanced semiconductor labs that face various challenges, such as decreasing dimensions at sub 32-nm nodes, advanced packaging methods, and an increased number of samples that require TEM imaging. The Helios NanoLab series combines the Elstar electron column with UC technology for high-resolution and high-contrast imaging and the TomahawkTM ion column for quick and accurate sample cross-sectioning. The Helios NanoLab 450S is well-suited for high throughput and high-resolution S/TEM sample preparation, imaging, and analysis. Its unique FlipStage and in-situ STEM detector can switch from sample preparation to STEM imaging in seconds without breaking the vacuum or exposing the sample to the environment.
Documents

No documents