Description

No description

Configuration

No. ITEM SPECIFICATIONS 1 wafer type 200mm-Notch. 2 Wafer Pre-aligner /OTF YES 3 Load Size 25 product wafer 4 wafer mapping YES 5 S MIF (configuration interface) O pen cassette 6 Cassette stage 25 position 7 SmartTag read Yes 8 Process Gas Line 3 lines with MFC controlled 9 Gas Flow Rate/Accuracy Stability (70% of max flow) ≦±1% (process flow rate) ≦±1% (process flow rate) 10 Lamp Lifetime Each lamp should have a lifetime of ≧ 5,000 wafers processed 11 Lamp Power Control Lamp zone independent Alterable step by step 12 Temperature Control SEKIDENKO OR2000 Type 450 - 1200℃ Measure Range (pyrometer) 0.1℃ Accuracy (pyrometer) 1 - 100℃/sec, uniformity Ramp-up Rate ≦±2℃, 1б Wafer Type : Notch ≧20 - 35℃/sec Ramp-down Rate ≦2℃, 1б, (at 1100℃/60sec), during closed loop control Temperature Overshoot ≦±0.5℃, 1б, (at 1150℃) (3 wafers) Repeatability 13 Components MFC Tubing O-ring STD : Horiba 1/4” 316LViton VCR STD: PALL Nupro Fitting Filter Air operation valve Manual valve 14 AGV Compatible/Upgradeable Yes 15 SECS II/GEM Communication t Yes 16 Rear Controller Yes 17 Software Latest Available Version 18 Safety Procedure / Exhaust Interlock fail Purge fail Interlock 19 Wafer Breakage ≦1/2000 wafers 20 Uptime ≧85% 21 Reliability Up Time/ ≧200 hrs ≦8 hrs ≧40 hrs MTBF (hrs) MTTR (hrs) MTBA (hrs) 22 Power requirement 208V 3φ 50HZ 23 Hard disk 2 Dual HDD

OEM Model Description

The Centura RTP is a rapid thermal processing system offered by the Thermal Processing Organization. It is one of the most successful systems in the industry and has been recognized as the best-selling RTP system in the world by VLSI Research and Dataquest. The system is noted for its superb temperature control, performing standalone and integrated rapid thermal processing for silicide and implant anneal, oxidation, and nitridation for logic and DRAM devices down to 0.18mm. The RTP Centura’s industry-leading within-wafer and wafer-to-wafer uniformity provides dramatically successful uniformity of 5°C, 3s. Superior temperature control is also provided by the unique patented Honeycomb Source lamp module and emissivity-independent Emissometer temperature measurement tool. In addition to RTP processes, the Thermal Processing Organization also offers other high-temperature depositions such as integrated polysilicon, tungsten silicide, and silicon nitride.