Description

No Quartz Tube and Tray Manually loaded and capable of processing silicon and III-V substrates up to 150mm in diameter, Heatpulse 610 provides solutions to your process development and monitoring needs. Equipped with a graphical user interface to improve operator productivity, Heatpulse 610 offers recipe management and system diagnostics. Research wafer trays available for either Si or GaAs in 2″, 3″, 4″, 5″ and 6”

Configuration

Major System Features Semiconductor grade quartz process chamber 21 tungsten halogen lamps in an upper and lower array Extended Range Pyrometer: 400°C -1300oC (200°C w/TC) Graphical User Interface(GUI) Rebuilt to OEM specs- will look like new system These capabilities, combined with the heating chamber’s cold-wall design and superior heating uniformity, provide significant advantages over conventional furnace processing. Key Features Include Closed-loop temperature control with pyrometer or thermocouple temperature sensing. Precise time-temperature profiles tailored to suit specific process requirements. Fast heating and cooling rates unobtainable in conventional technologies. Consistent wafer-to-wafer process cycle repeatability. Elimination of external contamination. Small footprint and energy efficiency. Performance Specifications Recommended Steady State Temperature Range: 400-1250° C. Steady-State Temperature Stability: ± 2° C. Temperature Monitoring Mechanisms: Extended Range Pyrometer (ERP), used throughout the recommended temperature range, or a thermocouple, used for process temperatures below 400° C. Heating Rate: 1-200° C per second, user-controllable. Cooling Rate: Temperature dependent; max 150° C per second. Maximum Non-uniformity: ±5°C across a 6″ (150mm) wafer at 1150°C. (This is a one sigma deviation 100 angstrom oxide.) For a titanium silicidation process, no more than 4% increase in non-uniformity during the first anneal at 650°C to 700 °C. Post-anneal sheet resistivity measured on a 150mm wafer annealed at 1100° C for 10 seconds. R&D models optimized for slip control. Implant: As 1E16 50 KeV with implant uniformity ≤0.3% Lamp Life: Unconditionally guaranteed for three years. Steady State Time: 1-9999 sec. (1-600 sec. recommended) Wafer Sizes for the HEATPULSE 610: 2″, 3″, 4″, 5″ and 6″. Process Gases: The HEATPULSE system delivers one non-corrosive process gas with manually controlled flow. Optional MFC, Up to 4. GUI software Standard , upgrade to P-CAT 16 bit A/D