TE5000 TEL’s first original dry etch tool

TEL / TOKYO ELECTRON

TE 5000

TE 8500

Tactras™ Vigus™ is a highly reliable 300mm plasma etch system that enhances etch process productivity. It provides customized options for high aspect ratio holes, trench etch, mask and dielectric etch, and BEOL. The system is designed to deliver excellent wafer uniformity, low wafer-to-wafer variation, and high selectivity for thin film stop layers while maintaining a high etch rate. Up to 6 Vigus™ chambers can be installed on the Tactras™ platform. Tactras™ Vigus™ contributes to maximizing productivity for semiconductor manufacturers with industry-leading tool availability by minimizing offset in machine-to-machine and chamber-to-chamber with robust design, particle reduction techniques, introducing unit-assembly inspection method before shipment, and unique labor-saving automated functions. Overall, Tactras™ Vigus™ is a highly efficient and versatile etching system that offers many benefits to its users.

TACTRAS VIGUS

TELIUS SP

TE 8500P

UNITY IIE 855DD

TACTRAS VIGUS-0

UNITY  IIE-855II 

Tactras™ is a 300mm plasma etch system that enhances etch process productivity. It provides customized solutions for high aspect ratio holes, trench etch, mask and dielectric etch, and BEOL dielectric etch. The common base product design allows Tactras™ to be built for specific applications. The etch chambers that can be installed on Tactras™ employ optimal design technologies to achieve excellent within-wafer uniformity, low wafer-to-wafer variation, and high selectivity in shaping the etch profile. Up to 6 chambers can be installed on Tactras™, each capable of handling different etch applications as required. Tactras™ offers operational advantages enabled by TEL’s cumulative knowhow on production technology, including a robust design to minimize machine-to-machine and chamber-to-chamber variation, particle reduction technology, unit-assembly inspection, and labor-saving automation. All of these contribute to customers’ productivity.

TACTRAS

Telius (300mm) etch systems.
Successor to the Unity, generally 4 chamber, but could support purge modules and other HW.

TELIUS

TE 5000SATC

TELIUS 305 DRM

The Unity II is a platform introduced by TEL in 1995. It has gained a solid reputation for being one of the most reliable platforms available, with over 800 systems delivered to customers worldwide. In 1998, the Unity was recognized as the World Leader in Etch System Performance in the prestigious VLSI Customer Satisfaction Survey. The Unity II is a 2 chamber tool, focused on 200mm wafers, and various configurations are offered for wafer sizes from 150 to 300mm. It is a testament to its reliability and performance.

UNITY II

Telius-SP is a high-performance etching system designed for large diameter (300 mm) requirements. It is part of the Telius platform and offers improved productivity through increased throughput, a reduced footprint, and higher energy efficiency. The system can be fitted with various chamber applications, including DRM and SCCM chambers, to support a wide range of process areas. It can support up to 4 chambers and boasts a high throughput, compact design, and low cost of ownership (CoO). Additionally, the system is designed for ease of maintenance. Overall, Telius-SP is a versatile and cost-effective solution for large diameter etching needs.

TELIUS SP 305 SCCM

TE 8500(S)ATC

TE 8401

TACTRAS VIGUS RK3

The UNITY® Etch System by TEL is a 200mm etching system that has set the industry benchmark for reliability worldwide. The system has undergone several improvements, with the development of the UNITY® II, UNITY® IIe, and most recently the UNITY® M(e). The UNITY® provides a reliable platform for various chambers, utilizing two plasma sources: the DRM (Dipole Ring Magnet), a MERIE source, and the SCCM (Super Capacitively Coupled Module), which applies to dual high-frequency plasma sources. The DRM has been successful in Dielectric and Silicon Deep Trench etch applications, while the newest chamber, SCCM, provides controlled plasma dissociation and independent control of plasma bias. The UNITY® series achieves excellent process performance for the 130 nm design rule and later generations, offering optimal productivity and reliability based on ongoing refinements to a proven platform.

UNITY

TE 5000 ATC

TELIUS SP 305 DRM

TE 8501

TELIUS SP VESTA

The UNITY® IIe is a plasma etch system designed to achieve excellent cost performance for the 130nm design rule and future technology generations. It is one of the various platforms of the UNITY® series, which also includes the M and Me models, each designed for specific applications to achieve higher productivity and reliability. The UNITY® IIe delivers world-class process results on a wide range of plasma etch applications, including HARC, Dual Damascene, low-k dielectrics, poly gate, and shallow trench etch. It features PE (IIe), IEM (IIe), DRM and SCCM™ chambers, and is available in 84, 85 and 88 models. The system boasts high throughput, a compact design, lower CoO, and ease of maintenance. The Me model also includes a Flow Control System. With its advanced features and capabilities, the UNITY® IIe is a powerful tool for achieving optimal process results.

UNITY IIE 855SS

The UNITY® IIe is a platform designed to achieve excellent cost performance for the 130nm design rule and future technology generations. It is one of the various platforms of the UNITY®, which also includes the M and Me platforms, each designed to achieve higher productivity and reliability for specific applications. The UNITY® IIe delivers world-class process results on a wide range of plasma etch applications, including HARC, Dual Damascene, low-k dielectrics, poly gate, and shallow trench etch. It features PE (IIe), IEM (IIe), DRM and SCCM chambers, and is available in 84, 85 and 88 models. The UNITY® IIe boasts high throughput, a compact design, lower CoO, and ease of maintenance.

UNITY IIE

TACTRAS VESTA

TELIUS 305 SCCM

TE8500ATC

The UNITY® IIe 85 is a plasma etch system designed to achieve excellent cost performance for the 130nm design rule and future technology generations. It is one of the various platforms of the UNITY® series, including IIe, M, and Me, which were designed to achieve higher productivity and reliability for specific applications. The UNITY® IIe 85 delivers world-class process results on a wide range of plasma etch applications, including HARC, Dual Damascene, low-k dielectrics, poly gate, and shallow trench etch. It features PE (IIe), IEM (IIe), DRM and SCCM chambers, and is known for its high throughput, compact design, and lower CoO. Additionally, it offers ease of maintenance and a Flow Control System (Me). The UNITY® IIe is available in 84, 85 and 88 models.

UNITY IIE 855 PP

TE 8500PATC

TACTRAS RLSA

UNITY™ Me is a cost effective dry etch system for 100/150/200mm wafer diameter, which has been attracting attention in recent years again as a highly efficient system and is still sold as a new product. There are rich variety of special chamber specifications, such as SCCM™, DRM for SiO2/SiN etch and UD chamber for Si/SiC trench etch. TEL offers a wide range of etch applications to the customer through closely collaboration in process demonstration using internal evaluation tools.

Unity ME was originally made in Mass. But moved to Japan, supported 3 chambers and an ash or other small unit. Originally 200mm, some were converted to 300mm.  TEL now manufactures this system again for 100-300mm.

UNITY ME

TE 5480

The Unity II is an etch system developed by TEL, which is part of their 200mm UNITY® series. The series is known for its reliability and has been improved upon with the development of the UNITY® II, the UNITY® IIe, and most recently the UNITY® M(e). The system provides a reliable platform for various chambers and utilizes two plasma sources: DRM (Dipole Ring Magnet), which is a MERIE source, and SCCM (Super Capacitively Coupled Module), which applies to dual high-frequency plasma sources. The DRM has been successful in Dielectric and Silicon Deep Trench etch applications, while the SCCM provides controlled plasma dissociation and independent control of plasma bias. The UNITY® series achieves excellent process performance for the 130 nm design rule and later generations, while also offering optimal productivity and reliability. It is based on ongoing refinements to a proven platform.

UNITY II 855SS

TE 8500S

UNITY II-855II

TACTRUS NCCP	

UNITY IIE 855 DP 

U2E-855SS

TE-850S ESC

TE 7500M

TE8500P-ESC

UNITY IIE 655 PP

UNITY IIE 844DD

TELIUS SP 305 SCCM TE

The UNITY®-EP CVD system is a state-of-the-art tool for high volume manufacturing of integrated circuits. It is based on the field-proven UNITY CVD process and offers productivity enhancements for CVD metal films. The system is designed to be space-efficient and easy to maintain, with improved process stability through the use of an upgraded heater temperature control (PCOT). The system can handle wafer sizes of 150mm and 200mm, with 1 to 4 process modules and 1 or 2 cooling modules. It can perform pre-clean, Ti, TiN processes and features plasma-free cleaning. This makes it a versatile and reliable tool for the semiconductor industry.

UNITY EP

UNITY IIE 845DD

The UNITY® is a plasma etch system that delivers world-class process results on a wide range of applications, including HARC, Dual Damascene, low-k dielectrics, poly gate, and shallow trench etch. It is designed to achieve excellent cost performance for the 130nm design rule and future technology generations. The UNITY® has various platforms, including the IIe, M, and Me, each designed to achieve higher productivity and reliability for specific applications. The UNITY® M model features high throughput, a compact design, and lower CoO (Cost of Ownership), as well as ease of maintenance. The UNITY® Me model includes a Flow Control System. The UNITY® IIe is available in 84, 85, and 88 models and features PE (IIe), IEM (IIe), DRM, and SCCM™ chambers.

UNITY M

UNITY 65DD

The UNITY Me is an etching system designed for the 200-mm wafer mass-production line. It boasts excellent cost performance, resulting in higher productivity and reliability. With a range of chamber applications, the UNITY Me delivers top-level productivity across a wide range of process areas, including HARC, Dual Damascene, low-k dielectrics, and poly gate. Some of the features of the UNITY Me include support for DRM and SCCM chambers, a maximum four-chamber capability, high throughput, a compact design, lower CoO, ease of maintenance, and a Flow Control System. With these features, the UNITY Me is a versatile and efficient etching system that can meet the needs of various production processes.

UNITY ME 85 TD

TE-8500SESC

TELIUS SP-308 SCCM

UNITY ME 85 DDD

TE 5000S

TE 7500

UNITY II 65DP

UNITY IIE 655II

UNITY II 85DL

UNITY IIE 85DI

UNITY  II 65DD

UNITY II 850 DRM

UNITY ME 85 SCCM

The UNITY® IIe is a plasma etch system designed to achieve excellent cost performance for the 130nm design rule and future technology generations. It is one of the various platforms of the UNITY® series, including IIe, M, and Me, which were designed to achieve higher productivity and reliability for specific applications. The UNITY® IIe 85 delivers world-class process results on a wide range of plasma etch applications, including HARC, Dual Damascene, low-k dielectrics, poly gate, and shallow trench etch. It features PE (IIe), IEM (IIe), DRM and SCCM chambers, and is known for its high throughput, compact design, and lower CoO. Additionally, it offers ease of maintenance and a Flow Control System (Me). The UNITY® IIe is available in 84, 85 and 88 models.

TEL / TOKYO ELECTRON

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TE 5000

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