Description
PECVD RF Substrate: 13.56 MHz Pump Requirements: Blower Temperature Range (C): 200-350C Deposition Rate: >400 A/min Uniformity (Within Wafer): <+/-5% Uniformity (Wafer to Wafer): <+/-2.5%Configuration
No ConfigurationOEM Model Description
Plasma Enhanced Chemical Vapor Deposition (PECVD) reactorDocuments
No documents
UNAXIS
790
CATEGORY
PECVD
Last Verified: 2 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
138844
Wafer Sizes:
3"/75mm, 4"/100mm, 5"/125mm, 6"/150mm
Vintage:
2002
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
PECVD RF Substrate: 13.56 MHz Pump Requirements: Blower Temperature Range (C): 200-350C Deposition Rate: >400 A/min Uniformity (Within Wafer): <+/-5% Uniformity (Wafer to Wafer): <+/-2.5%Configuration
No ConfigurationOEM Model Description
Plasma Enhanced Chemical Vapor Deposition (PECVD) reactorDocuments
No documents