
Description
No descriptionConfiguration
Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"OEM Model Description
Plasma Enhanced CVD system (PECVD)Documents
No documents
Verified
CATEGORY
PECVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
97600
Wafer Sizes:
4"/100mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
MICROSYSTEMS
MICROSYS 200
CATEGORY
PECVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
97600
Wafer Sizes:
4"/100mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"OEM Model Description
Plasma Enhanced CVD system (PECVD)Documents
No documents