Description
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Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"OEM Model Description
Plasma Enhanced CVD system (PECVD)Documents
No documents
MICROSYSTEMS
MICROSYS 200
Verified
CATEGORY
PECVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
97600
Wafer Sizes:
4"/100mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
MICROSYSTEMS
MICROSYS 200
CATEGORY
PECVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
97600
Wafer Sizes:
4"/100mm
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"OEM Model Description
Plasma Enhanced CVD system (PECVD)Documents
No documents