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APPLIED MATERIALS (AMAT) PRODUCER GT PECVD
  • APPLIED MATERIALS (AMAT) PRODUCER GT PECVD
  • APPLIED MATERIALS (AMAT) PRODUCER GT PECVD
  • APPLIED MATERIALS (AMAT) PRODUCER GT PECVD
Description
PECVD (Chemical Vapor Deposition)
Configuration
No Configuration
OEM Model Description
Applied Materials offers PECVD (Plasma-Enhanced Chemical Vapor Deposition) TEOS (tetraethyl orthosilicate) and silane-based oxide and nitride films for high-productivity blanket film applications for ≤90nm technology nodes. These films deliver excellent thickness uniformity, low particulates, and repeatable film stress which make them ideal solutions for liner and capping layers for passivation, thick pre-metal dielectric (PMD) capacitor layer, and inter-metal dielectric (IMD) applications. For 130nm and 90nm copper dual damascene schemes, the Producer PECVD system offers production-proven TEOS FSG (fluorinated silicate glass) as the low k dielectric (k=3.45) and Damascene Nitride as the etch-stop and copper barrier layer. Damascene Nitride provides a unique in-situ copper removal step to ensure excellent adhesion and improved device reliability. High etch selectivity to FSG and low hydrogen content make this film ideal as an etch-stop layer. The TEOS FSG film, which is deposited on top of Damascene Nitride, provides significantly higher device reliability and performance compared to silane-based FSG films due to its inherent fluorine stability and moisture resistance. The 3.45 k-value reduces capacitance versus USG (undoped silicate glass) and silane FSG films, thereby increasing device speed and lowering power consumption for devices. These PECVD processes run on the production-proven, high-throughput Applied Producer platform. With its innovative Twin Chamber architecture, the Producer platform enables simultaneous processing of up to six wafers for superior productivity and significant reduction in cost of ownership with high system reliability. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes.
Documents

No documents

CATEGORY
PECVD

Last Verified: Over 30 days ago

Key Item Details

Condition:

Used


Operational Status:

Unknown


Product ID:

117884


Wafer Sizes:

12"/300mm


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

APPLIED MATERIALS (AMAT)

PRODUCER GT PECVD

verified-listing-icon
Verified
CATEGORY
PECVD
Last Verified: Over 30 days ago
listing-photo-7ba165f081944a3fa4507547571be913-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
Key Item Details

Condition:

Used


Operational Status:

Unknown


Product ID:

117884


Wafer Sizes:

12"/300mm


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
PECVD (Chemical Vapor Deposition)
Configuration
No Configuration
OEM Model Description
Applied Materials offers PECVD (Plasma-Enhanced Chemical Vapor Deposition) TEOS (tetraethyl orthosilicate) and silane-based oxide and nitride films for high-productivity blanket film applications for ≤90nm technology nodes. These films deliver excellent thickness uniformity, low particulates, and repeatable film stress which make them ideal solutions for liner and capping layers for passivation, thick pre-metal dielectric (PMD) capacitor layer, and inter-metal dielectric (IMD) applications. For 130nm and 90nm copper dual damascene schemes, the Producer PECVD system offers production-proven TEOS FSG (fluorinated silicate glass) as the low k dielectric (k=3.45) and Damascene Nitride as the etch-stop and copper barrier layer. Damascene Nitride provides a unique in-situ copper removal step to ensure excellent adhesion and improved device reliability. High etch selectivity to FSG and low hydrogen content make this film ideal as an etch-stop layer. The TEOS FSG film, which is deposited on top of Damascene Nitride, provides significantly higher device reliability and performance compared to silane-based FSG films due to its inherent fluorine stability and moisture resistance. The 3.45 k-value reduces capacitance versus USG (undoped silicate glass) and silane FSG films, thereby increasing device speed and lowering power consumption for devices. These PECVD processes run on the production-proven, high-throughput Applied Producer platform. With its innovative Twin Chamber architecture, the Producer platform enables simultaneous processing of up to six wafers for superior productivity and significant reduction in cost of ownership with high system reliability. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes.
Documents

No documents