Description
Chemical vapor depositionConfiguration
No ConfigurationOEM Model Description
The Applied Materials AKT1600 is a panel etcher and panel deposition tool with four loading ports, two vacuum load locks, and five chambers. Two chambers (A and B) are designated for etching, processing a maximum of two panels at a time. Etch Chamber A is used primarily for etching silicon nitrate (SiN) while Etch Chamber B is used to etch aluminum (Al), molybdenum (Mo), indium tin oxide (ITO) and amorphous silicon (a-Si). The three deposition chambers are single panel chambers. Chamber D is used to deposit SiN and a-Si. Chamber C is used to deposit material doped n-type and chamber E to deposit materials doped p-type although both chambers can also deposit un-doped amorphous silicon. The AKT 1600 plasma enhanced chemical vapor deposition (PECVD) system is a powerful vacuum system used to convert reactive gaseous species into a solid film. With its advanced capabilities and versatility, the AKT 1600 PECVD system is an essential tool for the fabrication of high-quality solar cells.Documents
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APPLIED MATERIALS (AMAT) / APPLIED KOMATSU TECH (AKT)
1600 PECVD
Verified
CATEGORY
PECVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
61853
Wafer Sizes:
Unknown
Vintage:
1999
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APPLIED MATERIALS (AMAT) / APPLIED KOMATSU TECH (AKT)
1600 PECVD
CATEGORY
PECVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
61853
Wafer Sizes:
Unknown
Vintage:
1999
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Chemical vapor depositionConfiguration
No ConfigurationOEM Model Description
The Applied Materials AKT1600 is a panel etcher and panel deposition tool with four loading ports, two vacuum load locks, and five chambers. Two chambers (A and B) are designated for etching, processing a maximum of two panels at a time. Etch Chamber A is used primarily for etching silicon nitrate (SiN) while Etch Chamber B is used to etch aluminum (Al), molybdenum (Mo), indium tin oxide (ITO) and amorphous silicon (a-Si). The three deposition chambers are single panel chambers. Chamber D is used to deposit SiN and a-Si. Chamber C is used to deposit material doped n-type and chamber E to deposit materials doped p-type although both chambers can also deposit un-doped amorphous silicon. The AKT 1600 plasma enhanced chemical vapor deposition (PECVD) system is a powerful vacuum system used to convert reactive gaseous species into a solid film. With its advanced capabilities and versatility, the AKT 1600 PECVD system is an essential tool for the fabrication of high-quality solar cells.Documents
No documents