Description
Aixtron CRIUS CCS Aixtron CRIUS CCS system - CRIUS Si-III/V tool for laser on silicon - (CCS) 300mm CRIUS cluster system, which includes two silicon-based and III/V-based MOCVD modules, and is particularly suitable for commercially available applications Growth of III/V compound semiconductors on silicon wafers. Diode lasers are made from a dilute nitride Ga (NAsP) material system deposited on silicon. Ga(NAsP) is particularly suitable for realizing next-generation 850nm diode lasers for data communications. In addition to laser-on-silicon integration, such devices will play a very important role in the future, especially when considering applications such as CMOS-on-silicon III/V.Configuration
No ConfigurationOEM Model Description
The AIXTRON CRIUS is a metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE, a leading provider of deposition equipment used in the semiconductor industry. The CRIUS series is designed for the epitaxial growth of compound semiconductor materials, offering advanced features and capabilities.Documents
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AIXTRON
CRIUS
Verified
CATEGORY
MOCVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Deinstalled
Product ID:
104131
Wafer Sizes:
12"/300mm
Vintage:
2011
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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AIXTRON
CRIUS
CATEGORY
MOCVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Deinstalled
Product ID:
104131
Wafer Sizes:
12"/300mm
Vintage:
2011
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Aixtron CRIUS CCS Aixtron CRIUS CCS system - CRIUS Si-III/V tool for laser on silicon - (CCS) 300mm CRIUS cluster system, which includes two silicon-based and III/V-based MOCVD modules, and is particularly suitable for commercially available applications Growth of III/V compound semiconductors on silicon wafers. Diode lasers are made from a dilute nitride Ga (NAsP) material system deposited on silicon. Ga(NAsP) is particularly suitable for realizing next-generation 850nm diode lasers for data communications. In addition to laser-on-silicon integration, such devices will play a very important role in the future, especially when considering applications such as CMOS-on-silicon III/V.Configuration
No ConfigurationOEM Model Description
The AIXTRON CRIUS is a metal-organic chemical vapor deposition (MOCVD) system developed by AIXTRON SE, a leading provider of deposition equipment used in the semiconductor industry. The CRIUS series is designed for the epitaxial growth of compound semiconductor materials, offering advanced features and capabilities.Documents
No documents