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Description
EUV mask and mask blank reflectometer (EUV-MBR) Stand-alone EUV mask blank reflectometer Distinctive EUV-MBR properties • Wavelength accuracy better than 2 pm • Small Spot down to < 250 x 100 μm2 • 2000 spectral channels of 1.7 pm width. • Less than 20 seconds exposure time for measuring full spectrum at small spot with full resolution • Precision on CWL_50 < 1 pm • Precision on reflectivity: < 0.1% abs. • Accuracy on reflectivity: < 0.3 % abs. • Resolution limit on absorbers: < 0.1 % • Fiducial mark referenced positioning • Direct quantification of scatter and flare.Configuration
Spectral range measured < 12.5 to > 14.5 nm Spectral Resolution ≈ 1.7 pm Measured spot size Typ. 250x100 μm2 -- Measured Signal dynamics > 12 bit ➔ From < 0.01 % to > 60% CWL_50 Av. Accuracy: ≤ 3 pm CWL_50 Precision, 3σ ≤ 1 pm Peak Reflectivity Av. Accuracy Rpeak ~ 65% ≤ 0.5 % absolute Peak Reflectivity Precision Rpeak ~ 65%, 3σ ≤ 0.5 %absolute Peak Reflectivity Av. Accuracy Rpeak ~ 1% ≤ 0.05 % absolute Peak Reflectivity : Precision Rpeak ~ 1%: ≤ 0.05%: , 3σ ≤ 0.02% absoluteOEM Model Description
Our flagship, the EUV-MBR is a stand alone tool for automated characterization of multilayers and absorbers of EUV masks and mask blanks based on our well.Documents
No documents
Verified
CATEGORY
Lithography
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
70399
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
RESEARCH INSTRUMENTS
EUV MBR
CATEGORY
Lithography
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
70399
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
EUV mask and mask blank reflectometer (EUV-MBR) Stand-alone EUV mask blank reflectometer Distinctive EUV-MBR properties • Wavelength accuracy better than 2 pm • Small Spot down to < 250 x 100 μm2 • 2000 spectral channels of 1.7 pm width. • Less than 20 seconds exposure time for measuring full spectrum at small spot with full resolution • Precision on CWL_50 < 1 pm • Precision on reflectivity: < 0.1% abs. • Accuracy on reflectivity: < 0.3 % abs. • Resolution limit on absorbers: < 0.1 % • Fiducial mark referenced positioning • Direct quantification of scatter and flare.Configuration
Spectral range measured < 12.5 to > 14.5 nm Spectral Resolution ≈ 1.7 pm Measured spot size Typ. 250x100 μm2 -- Measured Signal dynamics > 12 bit ➔ From < 0.01 % to > 60% CWL_50 Av. Accuracy: ≤ 3 pm CWL_50 Precision, 3σ ≤ 1 pm Peak Reflectivity Av. Accuracy Rpeak ~ 65% ≤ 0.5 % absolute Peak Reflectivity Precision Rpeak ~ 65%, 3σ ≤ 0.5 %absolute Peak Reflectivity Av. Accuracy Rpeak ~ 1% ≤ 0.05 % absolute Peak Reflectivity : Precision Rpeak ~ 1%: ≤ 0.05%: , 3σ ≤ 0.02% absoluteOEM Model Description
Our flagship, the EUV-MBR is a stand alone tool for automated characterization of multilayers and absorbers of EUV masks and mask blanks based on our well.Documents
No documents