Description

Tool capable of Pt, Au, Ta, Ti, Al, TiW, oxide/ nitride dielectric etching Etch rate of >500A/ min 200 mm Wafer size , Variable wafer thickness (of 300 um to 1200 um) . SECS/ GEM communication Tool Must have e-beam neutralizer ( to avoid surface charging) Tool must have N2, He, Ar, MFC, (O2 MFC if reactive + Ion beam etching is available) Tilt and rotation control of substrate ( Sub Holder) Etch Non-uniformity of 3% or better ( expected 2%)-1 Sig Excellent chuck cooling ( Helium cooling preferred), no resist burning Multi stage cryo, or Turbo pump for chamber pump down, capable of pumping down to 1 X 10E-7 or lower Load lock process and automated handler - Single End point detection ( Optical or SIMS, nice to have)-Optional

Configuration

No Configuration

OEM Model Description

The RF-350 is an automatic, single-substrate, loadlocked production system that uses a 300mm diameter, inductively coupled ion source for large substrates. It is similar to the RF-210 in that it provides excellent uniformity from its inductively-coupled, highly-collimated, filamentless, RF ion source during RIBE or ion milling. The RF-350 offers maximized process flexibility due to its reactive gas capabilities and independent control of ion beam parameters and ion incident angle. Additionally, its modular design allows for a seamless and cost-effective upgrade from single substrate, loadlock processing to cassette-to-cassette loading. This makes the RF-350 a versatile and efficient tool for substrate processing.