Designs, manufactures and services ion implantation and other processing equipment used in the fabrication of semiconductor chips.

The GSD/HE is a high-energy implant device that is designed to maximize productivity and flexibility in a wide range of implant applications, including 200mm high energy implantation for logic and memory chips. With an energy range from 10keV to over 3MeV, it can perform all retrograde wells and channel implants in a chain. The device features exceptional beam purity, thanks to its patented linear acceleration technology, and is built on a production-proven GSD wafer-handling architecture. It is also easy to access and maintain, which helps to increase productivity and reduce the cost of ownership. Additionally, the GSD/HE can be used as a backup for medium current implantation, further increasing ROI.

AXCELIS

GSD HE

The AXCELIS NV 10-160 is a high-energy ion implanter, specifically designed for implanting ions into bare silicon wafers. It operates at 60 keV energy, and its implantation process allows for precise dosing in the range of 1 to 5∙10^15 ions per square centimeter. After implantation, the wafers can be annealed at 600°C for 20 minutes to activate and optimize the implanted ions' performance. The AXCELIS NV 10-160 is a powerful tool used in semiconductor manufacturing for creating controlled doping profiles and modifying material properties in silicon wafers, essential for producing advanced semiconductor devices.

NV 10 160

NV GSD

Purion XEmax—Dual LINAC design with patented Boost Technology for the highest energies up to 15 MeV.

PURION XEmax

The GSD/VHE is a high-energy implanter that is currently the most powerful in the industry. It has an extended energy range of up to 5MeV and features quad implant capability, superior cooling, and medium current performance. This makes it a reliable solution for both manufacturing and research and development applications. It is particularly well-suited for the creation of advanced integrated circuits that require deep twin or triple wells and buried layer structures. One of the key advantages of the GSD/VHE is its unmatched beam purity, which is achieved through the use of patented linear acceleration technology. This results in exceptional productivity and a low cost of ownership. The GSD/VHE is capable of performing 200mm very high energy implantation for logic, memory chips, and FLASH memory chips.

GSD VHE

Purion XE, high energy system, combines Axcelis' production-proven RF Linac high energy, spot beam technology with the Purion platform. 

PURION XE

PURION EXE

The Optima XE combines Axcelis' production-proven RF Linac high energy, spot beam technology with a high-speed, state-of-the-art single wafer endstation, enabling unmatched throughput. Axcelis' advanced spot beam ensures that all points across the wafer see the same beam at the same beam angle, resulting in exceptional process control and maximum yield.

OPTIMA XE

The Optima HE is a multi-wafer high energy tools.

OPTIMA HE

Paradigm XE, high energy version, is the standard tool offering for 300 mm wafers.

PARADIGM XE

 Purion VXE offers a higher energy range.

PURION VXE

PARADIGM

NV 1000

High energy implanter. 
 processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability.
 A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed.

NV GSD HE3

the Optima XE, was released in the fourth quarter of 2007 and upgraded to the Optima XEx in 2009. The Optima XEx combines Axcelis' production-proven RF Linac high energy, spot beam technology with a high-speed, state-of-the-art single wafer endstation, enabling unmatched throughput. Axcelis' advanced spot beam ensures that all points across the wafer see the same beam at the same beam angle, resulting in exceptional process control and maximum yield. 

AXCELIS

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GSD HE

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