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Description
IMP Warehoused since the year 2023Configuration
No ConfigurationOEM Model Description
The SEN Corporation / Sumitomo NV-GSD-HC3 is a high current ion implantation system designed for the efficient and high-volume production of devices such as DRAMs using 300 mm wafers. This model excels in ultra-low energy applications, offering implantation energy as low as 0.2 keV up to 80 keV. It ensures high current with minimal energy contamination through a deceleration mechanism, making it suitable for delicate processes down to 0.2 keV. The system features a high-performance, long-life ion source (ELS) for consistent performance. It provides high accuracy of implantation with excellent beam quality, minimizing metal contamination and cross-contamination using advanced technologies like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). Additionally, a plasma shower system minimizes charge buildup, enhancing process stability.Documents
No documents
CATEGORY
High Current
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
117841
Wafer Sizes:
12"/300mm
Vintage:
2002
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SEN CORPORATION / SUMITOMO
NV GSD HC3
CATEGORY
High Current
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
117841
Wafer Sizes:
12"/300mm
Vintage:
2002
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
IMP Warehoused since the year 2023Configuration
No ConfigurationOEM Model Description
The SEN Corporation / Sumitomo NV-GSD-HC3 is a high current ion implantation system designed for the efficient and high-volume production of devices such as DRAMs using 300 mm wafers. This model excels in ultra-low energy applications, offering implantation energy as low as 0.2 keV up to 80 keV. It ensures high current with minimal energy contamination through a deceleration mechanism, making it suitable for delicate processes down to 0.2 keV. The system features a high-performance, long-life ion source (ELS) for consistent performance. It provides high accuracy of implantation with excellent beam quality, minimizing metal contamination and cross-contamination using advanced technologies like the VSD (Virtual Slit Disk) and TSDF (Triple Surface Disk Faraday). Additionally, a plasma shower system minimizes charge buildup, enhancing process stability.Documents
No documents