Description
No descriptionConfiguration
No ConfigurationOEM Model Description
The c.ACTIVATOR 150 is a high-temperature furnace developed by centrotherm for annealing SiC and other materials in Ar, N2, and H2 ambient. It is designed for high-volume SiC device manufacturing, with two versions available that can handle wafer sizes up to 200 mm. The unique all-metal-free design of the process tube and heating system allows for process temperatures up to 2000°C. The main application of the c.ACTIVATOR 150 is electrical activation by post-implantation annealing for SiC MOSFET and diode manufacturing at high temperatures of up to 2000°C. Other applications include high-temperature hydrogen annealing to smooth, clean, and round trenches after RIE etching in trench MOSFET manufacturing; cost-efficient dopant activation in GaN wafers at 1150-1250°C; and annealing of AlN seed layers and AlN epitaxial layers at ~1700°C. Overall, the c.ACTIVATOR 150 is a versatile tool for high-temperature annealing applications in semiconductor device manufacturing.Documents
No documents
Verified
CATEGORY
Furnaces / Diffusion
Last Verified: Yesterday
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
145199
Wafer Sizes:
6"/150mm
Vintage:
2021
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Similar Listings
View All
CENTROTHERM
c.ACTIVATOR 150
CATEGORY
Furnaces / Diffusion
Last Verified: Yesterday
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
145199
Wafer Sizes:
6"/150mm
Vintage:
2021
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
No ConfigurationOEM Model Description
The c.ACTIVATOR 150 is a high-temperature furnace developed by centrotherm for annealing SiC and other materials in Ar, N2, and H2 ambient. It is designed for high-volume SiC device manufacturing, with two versions available that can handle wafer sizes up to 200 mm. The unique all-metal-free design of the process tube and heating system allows for process temperatures up to 2000°C. The main application of the c.ACTIVATOR 150 is electrical activation by post-implantation annealing for SiC MOSFET and diode manufacturing at high temperatures of up to 2000°C. Other applications include high-temperature hydrogen annealing to smooth, clean, and round trenches after RIE etching in trench MOSFET manufacturing; cost-efficient dopant activation in GaN wafers at 1150-1250°C; and annealing of AlN seed layers and AlN epitaxial layers at ~1700°C. Overall, the c.ACTIVATOR 150 is a versatile tool for high-temperature annealing applications in semiconductor device manufacturing.Documents
No documents