Description
No descriptionConfiguration
No ConfigurationOEM Model Description
The AVP-8000 is a vertical batch furnace with a flexible platform for diffusion, oxidation, and LPCVD processes. It is a previous version of the AVP Ace and can handle 150-200mm wafers. Some features of the AVP-8000 include a small footprint that enables side by side installation, low cost of ownership, single or dual boat configuration, and the ability to handle up to 200 wafer batches. It also has flexible substrate handling for 150mm and/or 200mm wafers, including perforated and thin/bowed wafers. Some of its applications include wet/dry thermal oxide, radical oxidation, silicon nitride (stoichiometric and low stress), TEOS, SiH4 and DCS-based SiO2, doped (P, As, B) and un-doped polysilicon, atomic layer deposition, and anneal and cure from 100 to >1200°C.Documents
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Verified
CATEGORY
Furnaces / Diffusion
Last Verified: 2 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
145532
Wafer Sizes:
8"/200mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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AVIZA / SVG / THERMCO
AVP 8000
CATEGORY
Furnaces / Diffusion
Last Verified: 2 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
145532
Wafer Sizes:
8"/200mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
No ConfigurationOEM Model Description
The AVP-8000 is a vertical batch furnace with a flexible platform for diffusion, oxidation, and LPCVD processes. It is a previous version of the AVP Ace and can handle 150-200mm wafers. Some features of the AVP-8000 include a small footprint that enables side by side installation, low cost of ownership, single or dual boat configuration, and the ability to handle up to 200 wafer batches. It also has flexible substrate handling for 150mm and/or 200mm wafers, including perforated and thin/bowed wafers. Some of its applications include wet/dry thermal oxide, radical oxidation, silicon nitride (stoichiometric and low stress), TEOS, SiH4 and DCS-based SiO2, doped (P, As, B) and un-doped polysilicon, atomic layer deposition, and anneal and cure from 100 to >1200°C.Documents
No documents