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Description
CrystalFlex HPVE Reactor furnace GaN wafer for R&D and/or ProductionConfiguration
SPECS: Growth rate - Up to 200 microns/hour Growth pressure - Atmospheric operation Maximum Furnace Temp - 1200°C Carrier gas - Inert gas of N2 or Ar Reactant Gas - HCl and NH Wafer capacity Wafer size - Max Load 50mm - 12 75mm - 4 100mm - 3 150mm - 1OEM Model Description
Multi-Wafer Hydride Vapor Phase Epitaxy (HVPE) ReactorDocuments
No documents
Verified
CATEGORY
Epitaxial deposition (EPI)
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
89778
Wafer Sizes:
6"/150mm
Vintage:
2009
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
OXFORD
CrystalFlex
CATEGORY
Epitaxial deposition (EPI)
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
89778
Wafer Sizes:
6"/150mm
Vintage:
2009
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
CrystalFlex HPVE Reactor furnace GaN wafer for R&D and/or ProductionConfiguration
SPECS: Growth rate - Up to 200 microns/hour Growth pressure - Atmospheric operation Maximum Furnace Temp - 1200°C Carrier gas - Inert gas of N2 or Ar Reactant Gas - HCl and NH Wafer capacity Wafer size - Max Load 50mm - 12 75mm - 4 100mm - 3 150mm - 1OEM Model Description
Multi-Wafer Hydride Vapor Phase Epitaxy (HVPE) ReactorDocuments
No documents