Description
Target Substrate 4H-SiC Hot Wall CVD Wafer Size 100 mm (4") / 150 mm (6") — Growth Rate > 50 μm / hour High-speed growth Continuous Growth Thickness Up to 150 μm Continuous deposition capable Throughput 4 wafers / hour Based on 10 μm SiC epi Wafer In-plane Temp. Uniformity (4") < 1 °C — Wafer In-plane Temp. Uniformity (6") < 2 °C — Thickness Uniformity < 2 % (σ/mean) E.E = 3 mm Doping Concentration Uniformity < 4 % (σ/mean) E.E = 6 mm Defect Density < 0.02 / cm2 Low-defect Reactor Type Hot-wall CVD Single-wafer Heating Method Resistive Heating Side + bottom Gas Inlet Upper Gas Inlet Nozzle position adjustable Wafer Rotation High-speed Rotation Ensures uniformity Wafer Transfer Cassette-to-Cassette Auto Transfer Robotic auto transfer High-Temp Handling High-temperature wafer handling supported Improves productivity Source Gas SiHCl3 (TCS), SiH2Cl2 (DCS) Silicon source Carrier Gas H2 Hydrogen Etching Gas HCl — Doping Gas N2 (n-type) / TMA (p-type) Common usageConfiguration
SIC EpitaxialOEM Model Description
single-wafer SiC Epitaxial ReactorDocuments
No documents
Verified
CATEGORY
Epitaxial deposition (EPI)
Last Verified: Over 30 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
150881
Wafer Sizes:
6"/150mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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NUFLARE
EPIREVO S6
CATEGORY
Epitaxial deposition (EPI)
Last Verified: Over 30 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
150881
Wafer Sizes:
6"/150mm
Vintage:
Unknown
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Target Substrate 4H-SiC Hot Wall CVD Wafer Size 100 mm (4") / 150 mm (6") — Growth Rate > 50 μm / hour High-speed growth Continuous Growth Thickness Up to 150 μm Continuous deposition capable Throughput 4 wafers / hour Based on 10 μm SiC epi Wafer In-plane Temp. Uniformity (4") < 1 °C — Wafer In-plane Temp. Uniformity (6") < 2 °C — Thickness Uniformity < 2 % (σ/mean) E.E = 3 mm Doping Concentration Uniformity < 4 % (σ/mean) E.E = 6 mm Defect Density < 0.02 / cm2 Low-defect Reactor Type Hot-wall CVD Single-wafer Heating Method Resistive Heating Side + bottom Gas Inlet Upper Gas Inlet Nozzle position adjustable Wafer Rotation High-speed Rotation Ensures uniformity Wafer Transfer Cassette-to-Cassette Auto Transfer Robotic auto transfer High-Temp Handling High-temperature wafer handling supported Improves productivity Source Gas SiHCl3 (TCS), SiH2Cl2 (DCS) Silicon source Carrier Gas H2 Hydrogen Etching Gas HCl — Doping Gas N2 (n-type) / TMA (p-type) Common usageConfiguration
SIC EpitaxialOEM Model Description
single-wafer SiC Epitaxial ReactorDocuments
No documents