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Intrepid ES
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Epitaxial deposition (EPI)Overview
Intrepid ES is a 300mm epitaxy tool using our XP platform, and is designed for depositing critical transistor strain and channel layers. Processes include silicon (Si), silicon-germanium (SiGe), silicon-carbon (SiC), and other silicon-based compounds. Up to four Intrepid process modules can be configured on an Intrepid ES system.
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