Skip to main content
We value your privacy

We and our selected partners use cookies to enhance your browsing experience, serve personalized content, and analyze our traffic. By clicking "Accept All", you consent to our use of cookies. Read More

Moov logo

Moov Icon
TEGAL 901E
  • TEGAL 901E
  • TEGAL 901E
  • TEGAL 901E
Description
Plasma Etcher T901
Configuration
No Configuration
OEM Model Description
The Tegal 901e is an inline RIE/plasma production etcher for six-inch wafers. It is a single-wafer, cassette-to-cassette driven tool with easy-to-use menu control and a 13.56 MHz RF Generator. The input gases are controlled by MFC, with up to 4 MFCs in the system. This tool implements multi-step etch recipes using multiple process gases and has been optimized for specific etches of specific films. Gases available in this configuration are N2, O2, SF6, CHF3, and CF4. The Tegal 901e plasma etcher is used by the semiconductor industry for integrated circuit fabrication. It is an industry standard in single-wafer dry etch of silicon nitride, polysilicon, amorphous silicon, and silicon oxide. Wafers are transported to a reaction chamber utilizing a non-friction spatula wafer transport mechanism. A gas mixture is introduced into the Reaction Chamber and becomes reactive by the application of radio frequency (RF) electromagnetic radiation. The reactive mixture, or plasma, etches away material that is not covered by the masking photoresist. The etch process is terminated at an appropriate time, the wafer is unloaded from the reaction chamber, and a new wafer is introduced repeating the cycle until all wafers have been processed.
Documents

No documents

PREFERRED
 
SELLER
verified-listing-icon

Verified

CATEGORY
Dry / Plasma Etch

Last Verified: Over 60 days ago

Buyer pays 12% premium of final sale price
Key Item Details

Condition:

Used


Operational Status:

Unknown


Product ID:

52247


Wafer Sizes:

6"/150mm


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
PREFERRED
 
SELLER

TEGAL

901E

verified-listing-icon
Verified
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
listing-photo-e6d706940eff4d048d332bd073701325-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/1089/e6d706940eff4d048d332bd073701325/307f678676c94af4834dacc46440dd8a_90b82ff2cc494f218108669e5ac6194f1201a_mw.jpeg
listing-photo-e6d706940eff4d048d332bd073701325-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/1089/e6d706940eff4d048d332bd073701325/ebe0b97c6ec44003ae7374233877a0e3_7f90e5c94a3142f8864651800342302d1201a_mw.jpeg
listing-photo-e6d706940eff4d048d332bd073701325-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/1089/e6d706940eff4d048d332bd073701325/7b6618c62c7a42228031d9a8c5e9bdbd_1d8ab53a887d454a957ccc296d1e6d81_mw.jpeg
Buyer pays 12% premium of final sale price
Key Item Details

Condition:

Used


Operational Status:

Unknown


Product ID:

52247


Wafer Sizes:

6"/150mm


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Plasma Etcher T901
Configuration
No Configuration
OEM Model Description
The Tegal 901e is an inline RIE/plasma production etcher for six-inch wafers. It is a single-wafer, cassette-to-cassette driven tool with easy-to-use menu control and a 13.56 MHz RF Generator. The input gases are controlled by MFC, with up to 4 MFCs in the system. This tool implements multi-step etch recipes using multiple process gases and has been optimized for specific etches of specific films. Gases available in this configuration are N2, O2, SF6, CHF3, and CF4. The Tegal 901e plasma etcher is used by the semiconductor industry for integrated circuit fabrication. It is an industry standard in single-wafer dry etch of silicon nitride, polysilicon, amorphous silicon, and silicon oxide. Wafers are transported to a reaction chamber utilizing a non-friction spatula wafer transport mechanism. A gas mixture is introduced into the Reaction Chamber and becomes reactive by the application of radio frequency (RF) electromagnetic radiation. The reactive mixture, or plasma, etches away material that is not covered by the masking photoresist. The etch process is terminated at an appropriate time, the wafer is unloaded from the reaction chamber, and a new wafer is introduced repeating the cycle until all wafers have been processed.
Documents

No documents