Description
No descriptionConfiguration
-Materials Etched: Si, SOI wafers -Masks: SiO2, SiN -Gases: SF6, C4F8, Ar, O2, Co2 -Photoresists: SC1800 series& SPR220 (Shipley), AZ4000 series (Clariant), NPR (Futurex) -Temp range: -20C to 100C Windows 2000 PC Note: pumps not includedOEM Model Description
With market leading etch rates using a conventional de-coupled plasma source, the HRM provides a cost effective Deep Reactive lon Etch (DRIE) processing chamber. Designed to offer high etch rates while controlling ion damage, the HRM is ideal for deep anisotropic silicon etching using STS' ASE® process technology.Documents
No documents
STS
HRM
Verified
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
110058
Wafer Sizes:
6"/150mm
Vintage:
2003
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
STS
HRM
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
110058
Wafer Sizes:
6"/150mm
Vintage:
2003
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
-Materials Etched: Si, SOI wafers -Masks: SiO2, SiN -Gases: SF6, C4F8, Ar, O2, Co2 -Photoresists: SC1800 series& SPR220 (Shipley), AZ4000 series (Clariant), NPR (Futurex) -Temp range: -20C to 100C Windows 2000 PC Note: pumps not includedOEM Model Description
With market leading etch rates using a conventional de-coupled plasma source, the HRM provides a cost effective Deep Reactive lon Etch (DRIE) processing chamber. Designed to offer high etch rates while controlling ion damage, the HRM is ideal for deep anisotropic silicon etching using STS' ASE® process technology.Documents
No documents